Abstract
The potential operating performance of Terahertz quantum cascade lasers are compared with contemporary shorter wavelength mid-infrared devices from the viewpoint of the carrier dynamics within the active region. It has been shown that the internal quantum efficiency for radiative transitions between two subbands in GaAs at Terahertz frequencies is greater at low temperatures than that at mid-infrared wavelengths. It is comparable at 77 K and less at room temperature. Furthermore the internal quantum efficiency is higher for vertical intrawell transitions than diagonal interwell transitions at Terahertz frequencies
Original language | English |
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Title of host publication | Proceedings of 12th IEEE Lasers and Electro-Optics Society Annual Meeting |
Subtitle of host publication | LEOS 1999 |
Publisher | IEEE |
Pages | 578-579 |
Number of pages | 2 |
Volume | 2 |
ISBN (Electronic) | 0780356365 |
ISBN (Print) | 0780356349, 0780356357 |
DOIs | |
Publication status | Published - 6 Aug 2002 |
Externally published | Yes |
Event | 12th Annual Meeting IEEE Lasers and Electro-Optics Society - San Francisco, United States Duration: 8 Nov 1999 → 11 Nov 1999 Conference number: 12 |
Publication series
Name | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
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Publisher | Institute of Electrical and Electronics Engineers Inc. |
Volume | 2 |
ISSN (Print) | 1092-8081 |
Conference
Conference | 12th Annual Meeting IEEE Lasers and Electro-Optics Society |
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Abbreviated title | LEOS'99 |
Country/Territory | United States |
City | San Francisco |
Period | 8/11/99 → 11/11/99 |