The Ci(SiI)n defect in neutron-irradiated silicon

C. A. Londos, S. R.G. Christopoulos, A. Chroneos, T. Angeletos, M. Potsidi, G. Antonaras

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We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (Ci) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of Ci(SiI) defects and upon annealing to the sequential formation of Ci(SiI)n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm−1 related to the Ci(SiI) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the Ci(SiI) and the Ci(SiI)2 defects.

Original languageEnglish
Pages (from-to)930-934
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Issue number2
Early online date30 Nov 2019
Publication statusPublished - 1 Jan 2020
Externally publishedYes


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