The Ci(SiI)n defect in neutron-irradiated silicon

C. A. Londos; S. R.G. Christopoulos; A. Chroneos; T. Angeletos; M. Potsidi; G. Antonaras

doi:10.1007/s10854-019-02602-4

The C_i(Si_I)_n defect in neutron-irradiated silicon

C. A. Londos, S. R.G. Christopoulos, A. Chroneos, T. Angeletos, M. Potsidi, G. Antonaras

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Abstract

We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (C_i) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of C_i(Si_I) defects and upon annealing to the sequential formation of C_i(Si_I)_n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm⁻¹ related to the C_i(Si_I) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the C_i(Si_I) and the C_i(Si_I)₂ defects.

Original language	English
Pages (from-to)	930-934
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	31
Issue number	2
Early online date	30 Nov 2019
DOIs	https://doi.org/10.1007/s10854-019-02602-4
Publication status	Published - 1 Jan 2020
Externally published	Yes

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title = "The Ci(SiI)n defect in neutron-irradiated silicon",

abstract = "We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (Ci) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of Ci(SiI) defects and upon annealing to the sequential formation of Ci(SiI)n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm−1 related to the Ci(SiI) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the Ci(SiI) and the Ci(SiI)2 defects.",

keywords = "Activation energy, Annealing, Carbon, Infrared spectroscopy, Silicon",

author = "Londos, {C. A.} and Christopoulos, {S. R.G.} and A. Chroneos and T. Angeletos and M. Potsidi and G. Antonaras",

note = "Funding Information: T. Angeletos is grateful to the A. S. Onassis Foundation for financial support though his Ph.D. scholarship (Grant No. G ZL 001-1/2015-2016). Funding Information: T. Angeletos is grateful to the A. S. Onassis Foundation for financial support though his Ph.D. scholarship (Grant No. G ZL 001-1/2015-2016). Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Publisher Copyright: {\textcopyright} 2019, Springer Science+Business Media, LLC, part of Springer Nature.",

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AU - Londos, C. A.

AU - Christopoulos, S. R.G.

AU - Chroneos, A.

AU - Angeletos, T.

AU - Potsidi, M.

AU - Antonaras, G.

N1 - Funding Information: T. Angeletos is grateful to the A. S. Onassis Foundation for financial support though his Ph.D. scholarship (Grant No. G ZL 001-1/2015-2016). Funding Information: T. Angeletos is grateful to the A. S. Onassis Foundation for financial support though his Ph.D. scholarship (Grant No. G ZL 001-1/2015-2016). Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Publisher Copyright: © 2019, Springer Science+Business Media, LLC, part of Springer Nature.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (Ci) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of Ci(SiI) defects and upon annealing to the sequential formation of Ci(SiI)n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm−1 related to the Ci(SiI) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the Ci(SiI) and the Ci(SiI)2 defects.

AB - We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (Ci) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of Ci(SiI) defects and upon annealing to the sequential formation of Ci(SiI)n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm−1 related to the Ci(SiI) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the Ci(SiI) and the Ci(SiI)2 defects.

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The C_i(Si_I)_n defect in neutron-irradiated silicon

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