The redistribution of As during high-temperature annealing has been investigated as a function of the Si(100) substrate temperature (-120 °C, +25 °C, and +300 °C) during 2.5 keV implantation (to 1.5×1015atoms/cm2). Each implant produced a damaged near-surface region, the extent of which varied with implant temperature. Samples implanted at each temperature were annealed in a nitrogen ambient with a few percent oxygen for 10 s at 550, 925, and 975 °C. The changes in implant damage and dopant distributions both prior to and following annealing were investigated using medium energy ion scattering and secondary ion mass spectrometry. Transient enhanced diffusion (TED) of the dopant was observed for all implant temperatures after 925 °C annealing with the 25 °C implant showing the deepest diffusion. Between 925 and 975 °C annealing, the As diffusion rate in the 300 °C exceeded that of the 25 °C implant. Significantly, the -120 °C implant displayed less TED of As compared to the higher temperature implants following annealing at 975 °C. The results indicate that the diffusion is affected by the nature of the post-implant damage and the high arsenic concentrations.