The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers

E. E. Orlova; P. Harrison; W. M. Zhang; M. P. Halsall

doi:10.1134/1.1852646

The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers

E. E. Orlova, P. Harrison, W. M. Zhang, M. P. Halsall

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Abstract

The results of theoretical and experimental studies into the effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers are reported. The transitions between excited impurity states are induced by an interaction with acoustic phonons whose wave vectors exceed the scale of localization of the wave function in the wave-vector space and, therefore, are determined by the asymptotic behavior of the wave function of impurity states at large wave vectors. It is shown that the localization in a quantum well results in a slower decay of the wave functions of the impurity states in the wave vector space and can result in an exponential decrease in the lifetime of impurity states along with the width of the well. The theoretical results are in good agreement with the experimental data on the lifetime of acceptor states in GaAs/A1As:Be structures.

Original language	English
Pages (from-to)	58-61
Number of pages	4
Journal	Semiconductors
Volume	39
Issue number	1
DOIs	https://doi.org/10.1134/1.1852646
Publication status	Published - 1 Jan 2005
Externally published	Yes

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title = "The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers",

abstract = "The results of theoretical and experimental studies into the effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers are reported. The transitions between excited impurity states are induced by an interaction with acoustic phonons whose wave vectors exceed the scale of localization of the wave function in the wave-vector space and, therefore, are determined by the asymptotic behavior of the wave function of impurity states at large wave vectors. It is shown that the localization in a quantum well results in a slower decay of the wave functions of the impurity states in the wave vector space and can result in an exponential decrease in the lifetime of impurity states along with the width of the well. The theoretical results are in good agreement with the experimental data on the lifetime of acceptor states in GaAs/A1As:Be structures.",

keywords = "quantum well, phonons",

author = "Orlova, {E. E.} and P. Harrison and Zhang, {W. M.} and Halsall, {M. P.}",

note = "Funding Information: This study was supported by the Royal Society/NATO Fellowship, the Russian Foundation for Basic Research (project no. 03-02-16586), and the EPSRC (grant no. GR/N65639/01).",

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T1 - The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers

AU - Orlova, E. E.

AU - Harrison, P.

AU - Zhang, W. M.

AU - Halsall, M. P.

N1 - Funding Information: This study was supported by the Royal Society/NATO Fellowship, the Russian Foundation for Basic Research (project no. 03-02-16586), and the EPSRC (grant no. GR/N65639/01).

PY - 2005/1/1

Y1 - 2005/1/1

N2 - The results of theoretical and experimental studies into the effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers are reported. The transitions between excited impurity states are induced by an interaction with acoustic phonons whose wave vectors exceed the scale of localization of the wave function in the wave-vector space and, therefore, are determined by the asymptotic behavior of the wave function of impurity states at large wave vectors. It is shown that the localization in a quantum well results in a slower decay of the wave functions of the impurity states in the wave vector space and can result in an exponential decrease in the lifetime of impurity states along with the width of the well. The theoretical results are in good agreement with the experimental data on the lifetime of acceptor states in GaAs/A1As:Be structures.

AB - The results of theoretical and experimental studies into the effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers are reported. The transitions between excited impurity states are induced by an interaction with acoustic phonons whose wave vectors exceed the scale of localization of the wave function in the wave-vector space and, therefore, are determined by the asymptotic behavior of the wave function of impurity states at large wave vectors. It is shown that the localization in a quantum well results in a slower decay of the wave functions of the impurity states in the wave vector space and can result in an exponential decrease in the lifetime of impurity states along with the width of the well. The theoretical results are in good agreement with the experimental data on the lifetime of acceptor states in GaAs/A1As:Be structures.

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The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers

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