The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers

E. E. Orlova, P. Harrison, W. M. Zhang, M. P. Halsall

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	67-70
Number of pages	4
Journal	Fizika i Tekhnika Poluprovodnikov
Volume	39
Issue number	1
Publication status	Published - 2005
Externally published	Yes

Cite this

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title = "The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers",

keywords = "quantum well, phonons",

author = "Orlova, {E. E.} and P. Harrison and Zhang, {W. M.} and Halsall, {M. P.}",

year = "2005",

language = "English",

volume = "39",

pages = "67--70",

journal = "Fizika i Tekhnika Poluprovodnikov",

issn = "0015-3222",

publisher = "Sankt-Peterburgskaya Izdatel'skaya Firma ",

number = "1",

}

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T1 - The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers

AU - Orlova, E. E.

AU - Harrison, P.

AU - Zhang, W. M.

AU - Halsall, M. P.

PY - 2005

Y1 - 2005

KW - quantum well

KW - phonons

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SN - 0015-3222

VL - 39

SP - 67

EP - 70

JO - Fizika i Tekhnika Poluprovodnikov

JF - Fizika i Tekhnika Poluprovodnikov

IS - 1

ER -