The effects of dwell time on focused ion beam machining of silicon

A. Sabouri; C. J. Anthony; James Bowen; V. Vishnyakov; P. D. Prewett

doi:10.1016/j.mee.2014.02.025

The effects of dwell time on focused ion beam machining of silicon

A. Sabouri, C. J. Anthony, James Bowen, V. Vishnyakov, P. D. Prewett

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this study, the effects of dwell time on Ga⁺ focused ion beam machining at 30 keV for different milling currents were investigated. The surface topographies were analysed using atomic force microscopy (AFM) and the substrate structures were investigated by means of Raman spectroscopy. It has been observed that by increasing dwell time the total sputtering yield was increased even though the total dose was remained the same. Also the silicon damage by ion bombardment is reduced as the dwell time is increased. This is mainly due to catalyst behaviour of Ga inside Si which over a period of hours causes recrystallization of Si at room temperature by lowering the activation energy for crystallization.

Original language	English
Pages (from-to)	24-26
Number of pages	3
Journal	Microelectronic Engineering
Volume	121
Early online date	4 Mar 2014
DOIs	https://doi.org/10.1016/j.mee.2014.02.025
Publication status	Published - 1 Jun 2014
Externally published	Yes

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title = "The effects of dwell time on focused ion beam machining of silicon",

abstract = "In this study, the effects of dwell time on Ga+ focused ion beam machining at 30 keV for different milling currents were investigated. The surface topographies were analysed using atomic force microscopy (AFM) and the substrate structures were investigated by means of Raman spectroscopy. It has been observed that by increasing dwell time the total sputtering yield was increased even though the total dose was remained the same. Also the silicon damage by ion bombardment is reduced as the dwell time is increased. This is mainly due to catalyst behaviour of Ga inside Si which over a period of hours causes recrystallization of Si at room temperature by lowering the activation energy for crystallization.",

keywords = "Dwell time, Focused ion beams, Ion implantation damage, Raman spectroscopy",

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AU - Sabouri, A.

AU - Anthony, C. J.

AU - Bowen, James

AU - Vishnyakov, V.

AU - Prewett, P. D.

PY - 2014/6/1

Y1 - 2014/6/1

N2 - In this study, the effects of dwell time on Ga+ focused ion beam machining at 30 keV for different milling currents were investigated. The surface topographies were analysed using atomic force microscopy (AFM) and the substrate structures were investigated by means of Raman spectroscopy. It has been observed that by increasing dwell time the total sputtering yield was increased even though the total dose was remained the same. Also the silicon damage by ion bombardment is reduced as the dwell time is increased. This is mainly due to catalyst behaviour of Ga inside Si which over a period of hours causes recrystallization of Si at room temperature by lowering the activation energy for crystallization.

AB - In this study, the effects of dwell time on Ga+ focused ion beam machining at 30 keV for different milling currents were investigated. The surface topographies were analysed using atomic force microscopy (AFM) and the substrate structures were investigated by means of Raman spectroscopy. It has been observed that by increasing dwell time the total sputtering yield was increased even though the total dose was remained the same. Also the silicon damage by ion bombardment is reduced as the dwell time is increased. This is mainly due to catalyst behaviour of Ga inside Si which over a period of hours causes recrystallization of Si at room temperature by lowering the activation energy for crystallization.

KW - Dwell time

KW - Focused ion beams

KW - Ion implantation damage

KW - Raman spectroscopy

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VL - 121

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EP - 26

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

The effects of dwell time on focused ion beam machining of silicon

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