Abstract
The effects of implanted nitrogen, oxygen, carbon and self-damage, during high-temperature annealing, on the growth of helium-induced cavities in silicon were studied. The implantation of impurities and helium into silicon was done at room temperature. It was found that the presence of impurities reduced the movement of voids by pinning them to dislocations or impurity aggregates or by chemical reactions at the void surfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 238-244 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 94 |
| Issue number | 1 |
| Early online date | 20 Jun 2003 |
| DOIs | |
| Publication status | Published - 1 Jul 2003 |
| Externally published | Yes |