The influence of impurities on the growth of helium-induced cavities in silicon

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The effects of implanted nitrogen, oxygen, carbon and self-damage, during high-temperature annealing, on the growth of helium-induced cavities in silicon were studied. The implantation of impurities and helium into silicon was done at room temperature. It was found that the presence of impurities reduced the movement of voids by pinning them to dislocations or impurity aggregates or by chemical reactions at the void surfaces.

Original languageEnglish
Pages (from-to)238-244
Number of pages7
JournalJournal of Applied Physics
Volume94
Issue number1
Early online date20 Jun 2003
DOIs
Publication statusPublished - 1 Jul 2003
Externally publishedYes

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helium
impurities
cavities
voids
silicon
implantation
chemical reactions
damage
nitrogen
annealing
carbon
room temperature
oxygen

Cite this

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The influence of impurities on the growth of helium-induced cavities in silicon. / Vishnyakov, V. M.; Donnelly, S. E.; Carter, G.

In: Journal of Applied Physics, Vol. 94, No. 1, 01.07.2003, p. 238-244.

Research output: Contribution to journalArticle

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