The influence of impurities on the growth of helium-induced cavities in silicon

V. M. Vishnyakov; S. E. Donnelly; G. Carter

doi:10.1063/1.1576493

The influence of impurities on the growth of helium-induced cavities in silicon

V. M. Vishnyakov, S. E. Donnelly, G. Carter

University of Salford

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The effects of implanted nitrogen, oxygen, carbon and self-damage, during high-temperature annealing, on the growth of helium-induced cavities in silicon were studied. The implantation of impurities and helium into silicon was done at room temperature. It was found that the presence of impurities reduced the movement of voids by pinning them to dislocations or impurity aggregates or by chemical reactions at the void surfaces.

Original language	English
Pages (from-to)	238-244
Number of pages	7
Journal	Journal of Applied Physics
Volume	94
Issue number	1
Early online date	20 Jun 2003
DOIs	https://doi.org/10.1063/1.1576493
Publication status	Published - 1 Jul 2003
Externally published	Yes

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title = "The influence of impurities on the growth of helium-induced cavities in silicon",

abstract = "The effects of implanted nitrogen, oxygen, carbon and self-damage, during high-temperature annealing, on the growth of helium-induced cavities in silicon were studied. The implantation of impurities and helium into silicon was done at room temperature. It was found that the presence of impurities reduced the movement of voids by pinning them to dislocations or impurity aggregates or by chemical reactions at the void surfaces.",

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AB - The effects of implanted nitrogen, oxygen, carbon and self-damage, during high-temperature annealing, on the growth of helium-induced cavities in silicon were studied. The implantation of impurities and helium into silicon was done at room temperature. It was found that the presence of impurities reduced the movement of voids by pinning them to dislocations or impurity aggregates or by chemical reactions at the void surfaces.

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DO - 10.1063/1.1576493

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The influence of impurities on the growth of helium-induced cavities in silicon

Abstract

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