The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy

Sean Whelan, Dave G. Armour, Jaap A. Van Den Berg, Shenjun Zhang, Richard D. Goldberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of implant temperature and anneal gas environment on the redistribution of arsenic im- : planted into silicon at 2.5 keV to high concentrations has been studied. The as-implanted damage structures were observed to be strongly dependent on implant temperature. The transient enhanced diffusion observed during 10 second anneals was found to be highly dependent on the presence of oxygen. When annealing was carried out in pure nitrogen, significant loss of dopant occurred and the TED was not dependent on implant temperature. In an environment containing oxygen, all the dopant was retained and more extensive, implant temperature dependent redistribution was observed.

Original languageEnglish
Title of host publication2000 International Conference on Ion Implantation Technology
Subtitle of host publicationIIT 2000 - Proceedings
EditorsHeiner Ryssel, Lothar Frey, Jozsef Gyulai, Hans Glawischnig
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages178-181
Number of pages4
ISBN (Print)0780364627, 9780780364622
DOIs
Publication statusPublished - 2000
Externally publishedYes
Event13th IEEE International Conference on Ion Implantation Technology - Alpbach, Austria
Duration: 17 Sep 200022 Sep 2000
Conference number: 13
https://www.worldcat.org/title/ion-implantation-technology-2000-2000-international-conference-on-ion-implantation-technology-proceedings-alpbach-austria-17-22-september-2000/oclc/928804789

Conference

Conference13th IEEE International Conference on Ion Implantation Technology
Abbreviated titleIIT 2000
CountryAustria
CityAlpbach
Period17/09/0022/09/00
Internet address

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    Whelan, S., Armour, D. G., Van Den Berg, J. A., Zhang, S., & Goldberg, R. D. (2000). The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy. In H. Ryssel, L. Frey, J. Gyulai, & H. Glawischnig (Eds.), 2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings (pp. 178-181). [924119] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/.2000.924119