The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy

Sean Whelan; Dave G. Armour; Jaap A. Van Den Berg; Shenjun Zhang; Richard D. Goldberg

doi:10.1109/.2000.924119

The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy

Sean Whelan, Dave G. Armour, Jaap A. Van Den Berg, Shenjun Zhang, Richard D. Goldberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The effects of implant temperature and anneal gas environment on the redistribution of arsenic im- : planted into silicon at 2.5 keV to high concentrations has been studied. The as-implanted damage structures were observed to be strongly dependent on implant temperature. The transient enhanced diffusion observed during 10 second anneals was found to be highly dependent on the presence of oxygen. When annealing was carried out in pure nitrogen, significant loss of dopant occurred and the TED was not dependent on implant temperature. In an environment containing oxygen, all the dopant was retained and more extensive, implant temperature dependent redistribution was observed.

Original language	English
Title of host publication	2000 International Conference on Ion Implantation Technology
Subtitle of host publication	IIT 2000 - Proceedings
Editors	Heiner Ryssel, Lothar Frey, Jozsef Gyulai, Hans Glawischnig
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	178-181
Number of pages	4
ISBN (Print)	0780364627, 9780780364622
DOIs	https://doi.org/10.1109/.2000.924119
Publication status	Published - 2000
Externally published	Yes
Event	13th IEEE International Conference on Ion Implantation Technology - Alpbach, Austria Duration: 17 Sep 2000 → 22 Sep 2000 Conference number: 13 https://www.worldcat.org/title/ion-implantation-technology-2000-2000-international-conference-on-ion-implantation-technology-proceedings-alpbach-austria-17-22-september-2000/oclc/928804789

Conference

Conference	13th IEEE International Conference on Ion Implantation Technology
Abbreviated title	IIT 2000
Country/Territory	Austria
City	Alpbach
Period	17/09/00 → 22/09/00
Internet address	https://www.worldcat.org/title/ion-implantation-technology-2000-2000-international-conference-on-ion-implantation-technology-proceedings-alpbach-austria-17-22-september-2000/oclc/928804789

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Whelan, S., Armour, D. G., Van Den Berg, J. A., Zhang, S., & Goldberg, R. D. (2000). The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy. In H. Ryssel, L. Frey, J. Gyulai, & H. Glawischnig (Eds.), 2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings (pp. 178-181). [924119] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/.2000.924119

Whelan, Sean ; Armour, Dave G. ; Van Den Berg, Jaap A. et al. / The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy. 2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings. editor / Heiner Ryssel ; Lothar Frey ; Jozsef Gyulai ; Hans Glawischnig. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 178-181

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title = "The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy",

abstract = "The effects of implant temperature and anneal gas environment on the redistribution of arsenic im- : planted into silicon at 2.5 keV to high concentrations has been studied. The as-implanted damage structures were observed to be strongly dependent on implant temperature. The transient enhanced diffusion observed during 10 second anneals was found to be highly dependent on the presence of oxygen. When annealing was carried out in pure nitrogen, significant loss of dopant occurred and the TED was not dependent on implant temperature. In an environment containing oxygen, all the dopant was retained and more extensive, implant temperature dependent redistribution was observed.",

keywords = "implants, silicon, temperature dependence, nitrogen, rapid thermal annealing, solids, rapid thermal processing, physics, foundries, scattering",

author = "Sean Whelan and Armour, {Dave G.} and {Van Den Berg}, {Jaap A.} and Shenjun Zhang and Goldberg, {Richard D.}",

year = "2000",

doi = "10.1109/.2000.924119",

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booktitle = "2000 International Conference on Ion Implantation Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "13th IEEE International Conference on Ion Implantation Technology, IIT 2000 ; Conference date: 17-09-2000 Through 22-09-2000",

url = "https://www.worldcat.org/title/ion-implantation-technology-2000-2000-international-conference-on-ion-implantation-technology-proceedings-alpbach-austria-17-22-september-2000/oclc/928804789",

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Whelan, S, Armour, DG, Van Den Berg, JA, Zhang, S & Goldberg, RD 2000, The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy. in H Ryssel, L Frey, J Gyulai & H Glawischnig (eds), 2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings., 924119, Institute of Electrical and Electronics Engineers Inc., pp. 178-181, 13th IEEE International Conference on Ion Implantation Technology, Alpbach, Austria, 17/09/00. https://doi.org/10.1109/.2000.924119

The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy. / Whelan, Sean; Armour, Dave G.; Van Den Berg, Jaap A. et al.

2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings. ed. / Heiner Ryssel; Lothar Frey; Jozsef Gyulai; Hans Glawischnig. Institute of Electrical and Electronics Engineers Inc., 2000. p. 178-181 924119.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Zhang, Shenjun

AU - Goldberg, Richard D.

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AB - The effects of implant temperature and anneal gas environment on the redistribution of arsenic im- : planted into silicon at 2.5 keV to high concentrations has been studied. The as-implanted damage structures were observed to be strongly dependent on implant temperature. The transient enhanced diffusion observed during 10 second anneals was found to be highly dependent on the presence of oxygen. When annealing was carried out in pure nitrogen, significant loss of dopant occurred and the TED was not dependent on implant temperature. In an environment containing oxygen, all the dopant was retained and more extensive, implant temperature dependent redistribution was observed.

KW - implants

KW - silicon

KW - temperature dependence

KW - nitrogen

KW - rapid thermal annealing

KW - solids

KW - rapid thermal processing

KW - physics

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KW - scattering

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SN - 9780780364622

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BT - 2000 International Conference on Ion Implantation Technology

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A2 - Frey, Lothar

A2 - Gyulai, Jozsef

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ER -

Whelan S, Armour DG, Van Den Berg JA, Zhang S, Goldberg RD. The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy. In Ryssel H, Frey L, Gyulai J, Glawischnig H, editors, 2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2000. p. 178-181. 924119 doi: 10.1109/.2000.924119

The influence of Substrate Temperature and the Anneal Ambient on the Redistribution of Arsenic Implanted into Silicon at Ultra-low Energy

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