The interaction between Xe and F in Si (1 0 0) pre-amorphised with 20 keV Xe and implanted with low energy BF2

M. Werner, J. A. Van Den Berg, D. G. Armour, G. Carter, T. Feudel, M. Herden, M. Bersani, D. Giubertoni, P. Bailey, T. C.Q. Noakes

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Abstract

The pre-amorphisation of Si by Xe+ ions, before source/drain and extension implants, is an attractive alternative to Ge+ or Si+, as it produces sharper amorphous/crystalline interfaces. Si (1 0 0) samples pre-amorphised with 20 keV Xe+ to a nominal dose of 2E14 cm-2 were implanted with 1 and 3 keV BF2+ to doses of 7E14cm-2. Samples were annealed at temperatures ranging from 600 to 1130°C and investigated by medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). Following annealing, it was observed that implanted Xe has interacted with F originating from the Bp 2+ implant. MEIS studies showed that for all annealing conditions, approximately half of the Xe accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2+ implant. This equates to the end of range of B and F within the amorphous Si. SIMS showed that in the pre-amorphised samples, approximately 10% of the F migrates into the bulk and is trapped at the same depth in a ∼1:1 ratio to Xe. A small fraction of the implanted B is also trapped. The effect is interpreted in terms of the formation of a defect structure within the amorphised Si, leading to F stabilised Xe bubble or XeF compound formation.

Original languageEnglish
Pages (from-to)198-202
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume114-115
Issue numberSPEC. ISS.
Early online date18 Sep 2004
DOIs
Publication statusPublished - 30 Dec 2004
Externally publishedYes

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