The interaction between Xe and F in Si (1 0 0) pre-amorphised with 20 keV Xe and implanted with low energy BF2

M. Werner, J. A. Van Den Berg, D. G. Armour, G. Carter, T. Feudel, M. Herden, M. Bersani, D. Giubertoni, P. Bailey, T. C.Q. Noakes

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The pre-amorphisation of Si by Xe+ ions, before source/drain and extension implants, is an attractive alternative to Ge+ or Si+, as it produces sharper amorphous/crystalline interfaces. Si (1 0 0) samples pre-amorphised with 20 keV Xe+ to a nominal dose of 2E14 cm-2 were implanted with 1 and 3 keV BF2+ to doses of 7E14cm-2. Samples were annealed at temperatures ranging from 600 to 1130°C and investigated by medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). Following annealing, it was observed that implanted Xe has interacted with F originating from the Bp 2+ implant. MEIS studies showed that for all annealing conditions, approximately half of the Xe accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2+ implant. This equates to the end of range of B and F within the amorphous Si. SIMS showed that in the pre-amorphised samples, approximately 10% of the F migrates into the bulk and is trapped at the same depth in a ∼1:1 ratio to Xe. A small fraction of the implanted B is also trapped. The effect is interpreted in terms of the formation of a defect structure within the amorphised Si, leading to F stabilised Xe bubble or XeF compound formation.

LanguageEnglish
Pages198-202
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume114-115
Issue numberSPEC. ISS.
Early online date18 Sep 2004
DOIs
Publication statusPublished - 30 Dec 2004
Externally publishedYes

Fingerprint

Secondary ion mass spectrometry
ion scattering
Scattering
Annealing
Ions
secondary ion mass spectrometry
Amorphization
Defect structures
Ion sources
dosage
annealing
interactions
Crystalline materials
ion sources
energy
bubbles
defects
Temperature
temperature

Cite this

Werner, M. ; Van Den Berg, J. A. ; Armour, D. G. ; Carter, G. ; Feudel, T. ; Herden, M. ; Bersani, M. ; Giubertoni, D. ; Bailey, P. ; Noakes, T. C.Q. / The interaction between Xe and F in Si (1 0 0) pre-amorphised with 20 keV Xe and implanted with low energy BF2. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2004 ; Vol. 114-115, No. SPEC. ISS. pp. 198-202.
@article{99c7f979a6a0401b9e0e41aed3001364,
title = "The interaction between Xe and F in Si (1 0 0) pre-amorphised with 20 keV Xe and implanted with low energy BF2",
abstract = "The pre-amorphisation of Si by Xe+ ions, before source/drain and extension implants, is an attractive alternative to Ge+ or Si+, as it produces sharper amorphous/crystalline interfaces. Si (1 0 0) samples pre-amorphised with 20 keV Xe+ to a nominal dose of 2E14 cm-2 were implanted with 1 and 3 keV BF2+ to doses of 7E14cm-2. Samples were annealed at temperatures ranging from 600 to 1130°C and investigated by medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). Following annealing, it was observed that implanted Xe has interacted with F originating from the Bp 2+ implant. MEIS studies showed that for all annealing conditions, approximately half of the Xe accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2+ implant. This equates to the end of range of B and F within the amorphous Si. SIMS showed that in the pre-amorphised samples, approximately 10{\%} of the F migrates into the bulk and is trapped at the same depth in a ∼1:1 ratio to Xe. A small fraction of the implanted B is also trapped. The effect is interpreted in terms of the formation of a defect structure within the amorphised Si, leading to F stabilised Xe bubble or XeF compound formation.",
keywords = "Bubbles, Dopant-defect interaction, MEIS, SIMS",
author = "M. Werner and {Van Den Berg}, {J. A.} and Armour, {D. G.} and G. Carter and T. Feudel and M. Herden and M. Bersani and D. Giubertoni and P. Bailey and Noakes, {T. C.Q.}",
year = "2004",
month = "12",
day = "30",
doi = "10.1016/j.mseb.2004.07.059",
language = "English",
volume = "114-115",
pages = "198--202",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "SPEC. ISS.",

}

The interaction between Xe and F in Si (1 0 0) pre-amorphised with 20 keV Xe and implanted with low energy BF2. / Werner, M.; Van Den Berg, J. A.; Armour, D. G.; Carter, G.; Feudel, T.; Herden, M.; Bersani, M.; Giubertoni, D.; Bailey, P.; Noakes, T. C.Q.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 114-115, No. SPEC. ISS., 30.12.2004, p. 198-202.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The interaction between Xe and F in Si (1 0 0) pre-amorphised with 20 keV Xe and implanted with low energy BF2

AU - Werner, M.

AU - Van Den Berg, J. A.

AU - Armour, D. G.

AU - Carter, G.

AU - Feudel, T.

AU - Herden, M.

AU - Bersani, M.

AU - Giubertoni, D.

AU - Bailey, P.

AU - Noakes, T. C.Q.

PY - 2004/12/30

Y1 - 2004/12/30

N2 - The pre-amorphisation of Si by Xe+ ions, before source/drain and extension implants, is an attractive alternative to Ge+ or Si+, as it produces sharper amorphous/crystalline interfaces. Si (1 0 0) samples pre-amorphised with 20 keV Xe+ to a nominal dose of 2E14 cm-2 were implanted with 1 and 3 keV BF2+ to doses of 7E14cm-2. Samples were annealed at temperatures ranging from 600 to 1130°C and investigated by medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). Following annealing, it was observed that implanted Xe has interacted with F originating from the Bp 2+ implant. MEIS studies showed that for all annealing conditions, approximately half of the Xe accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2+ implant. This equates to the end of range of B and F within the amorphous Si. SIMS showed that in the pre-amorphised samples, approximately 10% of the F migrates into the bulk and is trapped at the same depth in a ∼1:1 ratio to Xe. A small fraction of the implanted B is also trapped. The effect is interpreted in terms of the formation of a defect structure within the amorphised Si, leading to F stabilised Xe bubble or XeF compound formation.

AB - The pre-amorphisation of Si by Xe+ ions, before source/drain and extension implants, is an attractive alternative to Ge+ or Si+, as it produces sharper amorphous/crystalline interfaces. Si (1 0 0) samples pre-amorphised with 20 keV Xe+ to a nominal dose of 2E14 cm-2 were implanted with 1 and 3 keV BF2+ to doses of 7E14cm-2. Samples were annealed at temperatures ranging from 600 to 1130°C and investigated by medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). Following annealing, it was observed that implanted Xe has interacted with F originating from the Bp 2+ implant. MEIS studies showed that for all annealing conditions, approximately half of the Xe accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2+ implant. This equates to the end of range of B and F within the amorphous Si. SIMS showed that in the pre-amorphised samples, approximately 10% of the F migrates into the bulk and is trapped at the same depth in a ∼1:1 ratio to Xe. A small fraction of the implanted B is also trapped. The effect is interpreted in terms of the formation of a defect structure within the amorphised Si, leading to F stabilised Xe bubble or XeF compound formation.

KW - Bubbles

KW - Dopant-defect interaction

KW - MEIS

KW - SIMS

UR - http://www.scopus.com/inward/record.url?scp=10644227721&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2004.07.059

DO - 10.1016/j.mseb.2004.07.059

M3 - Article

VL - 114-115

SP - 198

EP - 202

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

T2 - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - SPEC. ISS.

ER -