The interaction between Xe and F in Si (1 0 0) pre-amorphised with 20 keV Xe and implanted with low energy BF2

M. Werner, J. A. Van Den Berg, D. G. Armour, G. Carter, T. Feudel, M. Herden, M. Bersani, D. Giubertoni, P. Bailey, T. C.Q. Noakes

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