The interaction of cavities in silicon with moving amorphous-crystalline interfaces

A. S. Gandy, S. E. Donnelly, M. F. Beaufort, E. Oliviero, P. F.P. Fichtner

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A detailed transmission electron microscopy (TEM) study has been carried out on the effect on helium-filled cavities (bubbles), contained entirely within a buried amorphous layer in silicon, of the recrystallisation of the layer by solid-phase epitaxial growth. On annealing to temperatures in the range 550-600 °C, recrystallisation took place at both amorphous-crystalline interfaces which, as they moved, were observed to sweep the cavities, keeping them initially confined within the amorphous region. The recrystallisation also gave rise to the formation of microtwin lamellae which clearly did not nucleate on the bubbles; contrary to previous reports. This paper seeks to explain aspects of the interaction of both cavities and microtwins with the advancing a/c interface in terms of defects within the amorphous layer.

Original languageEnglish
Pages (from-to)177-180
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2
Early online date10 Jan 2007
DOIs
Publication statusPublished - 1 Apr 2007
Externally publishedYes

Fingerprint

Crystalline materials
Silicon
cavities
silicon
bubbles
interactions
lamella
solid phases
helium
Epitaxial growth
Helium
transmission electron microscopy
annealing
Crystallization
defects
Annealing
Transmission electron microscopy
Defects
temperature
Temperature

Cite this

@article{6c3bdb4cb8c04b2d94d469213f617146,
title = "The interaction of cavities in silicon with moving amorphous-crystalline interfaces",
abstract = "A detailed transmission electron microscopy (TEM) study has been carried out on the effect on helium-filled cavities (bubbles), contained entirely within a buried amorphous layer in silicon, of the recrystallisation of the layer by solid-phase epitaxial growth. On annealing to temperatures in the range 550-600 °C, recrystallisation took place at both amorphous-crystalline interfaces which, as they moved, were observed to sweep the cavities, keeping them initially confined within the amorphous region. The recrystallisation also gave rise to the formation of microtwin lamellae which clearly did not nucleate on the bubbles; contrary to previous reports. This paper seeks to explain aspects of the interaction of both cavities and microtwins with the advancing a/c interface in terms of defects within the amorphous layer.",
author = "Gandy, {A. S.} and Donnelly, {S. E.} and Beaufort, {M. F.} and E. Oliviero and Fichtner, {P. F.P.}",
year = "2007",
month = "4",
day = "1",
doi = "10.1016/j.nimb.2007.01.021",
language = "English",
volume = "257",
pages = "177--180",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2",

}

The interaction of cavities in silicon with moving amorphous-crystalline interfaces. / Gandy, A. S.; Donnelly, S. E.; Beaufort, M. F.; Oliviero, E.; Fichtner, P. F.P.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, No. 1-2 , 01.04.2007, p. 177-180.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The interaction of cavities in silicon with moving amorphous-crystalline interfaces

AU - Gandy, A. S.

AU - Donnelly, S. E.

AU - Beaufort, M. F.

AU - Oliviero, E.

AU - Fichtner, P. F.P.

PY - 2007/4/1

Y1 - 2007/4/1

N2 - A detailed transmission electron microscopy (TEM) study has been carried out on the effect on helium-filled cavities (bubbles), contained entirely within a buried amorphous layer in silicon, of the recrystallisation of the layer by solid-phase epitaxial growth. On annealing to temperatures in the range 550-600 °C, recrystallisation took place at both amorphous-crystalline interfaces which, as they moved, were observed to sweep the cavities, keeping them initially confined within the amorphous region. The recrystallisation also gave rise to the formation of microtwin lamellae which clearly did not nucleate on the bubbles; contrary to previous reports. This paper seeks to explain aspects of the interaction of both cavities and microtwins with the advancing a/c interface in terms of defects within the amorphous layer.

AB - A detailed transmission electron microscopy (TEM) study has been carried out on the effect on helium-filled cavities (bubbles), contained entirely within a buried amorphous layer in silicon, of the recrystallisation of the layer by solid-phase epitaxial growth. On annealing to temperatures in the range 550-600 °C, recrystallisation took place at both amorphous-crystalline interfaces which, as they moved, were observed to sweep the cavities, keeping them initially confined within the amorphous region. The recrystallisation also gave rise to the formation of microtwin lamellae which clearly did not nucleate on the bubbles; contrary to previous reports. This paper seeks to explain aspects of the interaction of both cavities and microtwins with the advancing a/c interface in terms of defects within the amorphous layer.

UR - http://www.scopus.com/inward/record.url?scp=33947728474&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2007.01.021

DO - 10.1016/j.nimb.2007.01.021

M3 - Article

VL - 257

SP - 177

EP - 180

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

ER -