The production and use of ultralow energy ion beams

R. D. Goldberg, D. G. Armour, J. A. Van Den Berg, C. E.A. Cook, S. Whelan, S. Zhang, N. Knorr, M. A. Foad, H. Ohno

Research output: Contribution to journalArticle

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Abstract

An ion accelerator, purpose built to produce beams at energies down to 10 eV with current densities in the 10-100 μA cm-2 range, is described. Fitted with dual ion source assemblies, the machine enables ultralow energy ion implantation and the growth of films and multilayers to be carried out under highly controlled conditions. The accelerator delivers ion beams into an ultrahigh vacuum chamber, containing a temperature controlled target stage (range -120 to +1350°C), where they are used to study the fundamental physics relating to the interaction of ultralow energy ions with surfaces. This knowledge underlies a wide range of ion-beam and plasma-based technologies and, to illustrate its importance, results are presented from investigations designed to determine the optimum conditions for the growth of diamond-like and aluminum films by ion-beam deposition and the formation of ultrashallow junctions in semiconductors by 2.5 keV As+ implantation. The later investigation shows how transient arsenic diffusion, which occurs during post-implant thermal processing, can be controlled by manipulating the substrate temperature during implantation.

LanguageEnglish
Pages1032-1035
Number of pages4
JournalReview of Scientific Instruments
Volume71
Issue number2
DOIs
Publication statusPublished - Feb 2000
Externally publishedYes

Fingerprint

Ion implantation
Ion beams
ion beams
Particle accelerators
implantation
ion accelerators
Ions
Ultrahigh vacuum
Ion sources
vacuum chambers
Arsenic
arsenic
ion sources
assemblies
ultrahigh vacuum
ion implantation
energy
Diamonds
Multilayers
accelerators

Cite this

Goldberg, R. D., Armour, D. G., Van Den Berg, J. A., Cook, C. E. A., Whelan, S., Zhang, S., ... Ohno, H. (2000). The production and use of ultralow energy ion beams. Review of Scientific Instruments, 71(2), 1032-1035. https://doi.org/10.1063/1.1150379
Goldberg, R. D. ; Armour, D. G. ; Van Den Berg, J. A. ; Cook, C. E.A. ; Whelan, S. ; Zhang, S. ; Knorr, N. ; Foad, M. A. ; Ohno, H. / The production and use of ultralow energy ion beams. In: Review of Scientific Instruments. 2000 ; Vol. 71, No. 2. pp. 1032-1035.
@article{2e745d2e6f2a4b7fb4ae57b532fbb9dc,
title = "The production and use of ultralow energy ion beams",
abstract = "An ion accelerator, purpose built to produce beams at energies down to 10 eV with current densities in the 10-100 μA cm-2 range, is described. Fitted with dual ion source assemblies, the machine enables ultralow energy ion implantation and the growth of films and multilayers to be carried out under highly controlled conditions. The accelerator delivers ion beams into an ultrahigh vacuum chamber, containing a temperature controlled target stage (range -120 to +1350°C), where they are used to study the fundamental physics relating to the interaction of ultralow energy ions with surfaces. This knowledge underlies a wide range of ion-beam and plasma-based technologies and, to illustrate its importance, results are presented from investigations designed to determine the optimum conditions for the growth of diamond-like and aluminum films by ion-beam deposition and the formation of ultrashallow junctions in semiconductors by 2.5 keV As+ implantation. The later investigation shows how transient arsenic diffusion, which occurs during post-implant thermal processing, can be controlled by manipulating the substrate temperature during implantation.",
author = "Goldberg, {R. D.} and Armour, {D. G.} and {Van Den Berg}, {J. A.} and Cook, {C. E.A.} and S. Whelan and S. Zhang and N. Knorr and Foad, {M. A.} and H. Ohno",
year = "2000",
month = "2",
doi = "10.1063/1.1150379",
language = "English",
volume = "71",
pages = "1032--1035",
journal = "Review of Scientific Instruments",
issn = "0034-6748",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Goldberg, RD, Armour, DG, Van Den Berg, JA, Cook, CEA, Whelan, S, Zhang, S, Knorr, N, Foad, MA & Ohno, H 2000, 'The production and use of ultralow energy ion beams', Review of Scientific Instruments, vol. 71, no. 2, pp. 1032-1035. https://doi.org/10.1063/1.1150379

The production and use of ultralow energy ion beams. / Goldberg, R. D.; Armour, D. G.; Van Den Berg, J. A.; Cook, C. E.A.; Whelan, S.; Zhang, S.; Knorr, N.; Foad, M. A.; Ohno, H.

In: Review of Scientific Instruments, Vol. 71, No. 2, 02.2000, p. 1032-1035.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The production and use of ultralow energy ion beams

AU - Goldberg, R. D.

AU - Armour, D. G.

AU - Van Den Berg, J. A.

AU - Cook, C. E.A.

AU - Whelan, S.

AU - Zhang, S.

AU - Knorr, N.

AU - Foad, M. A.

AU - Ohno, H.

PY - 2000/2

Y1 - 2000/2

N2 - An ion accelerator, purpose built to produce beams at energies down to 10 eV with current densities in the 10-100 μA cm-2 range, is described. Fitted with dual ion source assemblies, the machine enables ultralow energy ion implantation and the growth of films and multilayers to be carried out under highly controlled conditions. The accelerator delivers ion beams into an ultrahigh vacuum chamber, containing a temperature controlled target stage (range -120 to +1350°C), where they are used to study the fundamental physics relating to the interaction of ultralow energy ions with surfaces. This knowledge underlies a wide range of ion-beam and plasma-based technologies and, to illustrate its importance, results are presented from investigations designed to determine the optimum conditions for the growth of diamond-like and aluminum films by ion-beam deposition and the formation of ultrashallow junctions in semiconductors by 2.5 keV As+ implantation. The later investigation shows how transient arsenic diffusion, which occurs during post-implant thermal processing, can be controlled by manipulating the substrate temperature during implantation.

AB - An ion accelerator, purpose built to produce beams at energies down to 10 eV with current densities in the 10-100 μA cm-2 range, is described. Fitted with dual ion source assemblies, the machine enables ultralow energy ion implantation and the growth of films and multilayers to be carried out under highly controlled conditions. The accelerator delivers ion beams into an ultrahigh vacuum chamber, containing a temperature controlled target stage (range -120 to +1350°C), where they are used to study the fundamental physics relating to the interaction of ultralow energy ions with surfaces. This knowledge underlies a wide range of ion-beam and plasma-based technologies and, to illustrate its importance, results are presented from investigations designed to determine the optimum conditions for the growth of diamond-like and aluminum films by ion-beam deposition and the formation of ultrashallow junctions in semiconductors by 2.5 keV As+ implantation. The later investigation shows how transient arsenic diffusion, which occurs during post-implant thermal processing, can be controlled by manipulating the substrate temperature during implantation.

UR - http://www.scopus.com/inward/record.url?scp=0001372673&partnerID=8YFLogxK

U2 - 10.1063/1.1150379

DO - 10.1063/1.1150379

M3 - Article

VL - 71

SP - 1032

EP - 1035

JO - Review of Scientific Instruments

T2 - Review of Scientific Instruments

JF - Review of Scientific Instruments

SN - 0034-6748

IS - 2

ER -

Goldberg RD, Armour DG, Van Den Berg JA, Cook CEA, Whelan S, Zhang S et al. The production and use of ultralow energy ion beams. Review of Scientific Instruments. 2000 Feb;71(2):1032-1035. https://doi.org/10.1063/1.1150379