The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells

Fei Long, W. E. Hagston, P. Harrison, T. Stirner

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

A detailed comparison of the empirical pseudopotential method with single and multiple band calculations based on the envelope function and effective mass approximations are presented. It is shown that, in order to give agreement with the more rigorous microscopic approach of the pseudopotential method, structural dependent effective masses and Luttinger parameters must be invoked. The CdTe/Cd1-xMnxTe system has been employed as an example, and the first pseudopotential calculations of quantum wells and superlattices in this material are presented. It is shown that the electron, light- and heavy-hole effective masses tend towards twice their bulk values in the limit of narrow quantum wells.

Original languageEnglish
Pages (from-to)3414-3421
Number of pages8
JournalJournal of Applied Physics
Volume82
Issue number7
DOIs
Publication statusPublished - 1 Oct 1997
Externally publishedYes

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