The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing

Dalius Seliuta; Viktoras Gružinskis; Vincas Tamošiunas; Aušrius Juozapavičius; Irmantas Kašalynas; Steponas Ašmontas; Gintaras Valušis; Paul Steenson; Wai Heng Chow; Paul Harrison; Alvydas Lisauskas; Hartmut G. Roskos; Klaus Köhler

doi:10.1063/1.2730437

The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing

Dalius Seliuta, Viktoras Gružinskis, Vincas Tamošiunas, Aušrius Juozapavičius, Irmantas Kašalynas, Steponas Ašmontas, Gintaras Valušis, Paul Steenson, Wai Heng Chow, Paul Harrison, Alvydas Lisauskas, Hartmut G. Roskos, Klaus Köhler

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A well-pronounced asymmetry in I-V-characteristics within low, 4.2-80 K, temperatures is demonstrated in asymmetrically in-plane shaped modulation-doped GaAs/AlGaAs structures. The results are explained by the presence of two different electric field gradients - the bigradient effect - induced by the geometrical shape. The features of the effect are revealed; the possibility to use it for GHz-THz sensing is explored via development of asymmetrically-shaped GaAs/Al_0.3Ga_0.7As-based and In_0.54Ga _0.46As-based bow-tie diodes. An effective bandwidth of 10 GHz - 1 THz and a sensitivity of about 5-6 V/W is achieved at room temperature.

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Editors	Wolfgang Jantsch, Friedrich Schaffler
Publisher	AIP Publishing
Pages	1419-1420
Number of pages	2
Volume	893
ISBN (Print)	9780735403970
DOIs	https://doi.org/10.1063/1.2730437
Publication status	Published - 10 Apr 2007
Externally published	Yes
Event	28th International Conference on the Physics of Semiconductors - Vienna, Austria Duration: 24 Jul 2006 → 28 Jul 2006 Conference number: 28

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors
Abbreviated title	ICPS 2006
Country/Territory	Austria
City	Vienna
Period	24/07/06 → 28/07/06

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Cite this

Seliuta, D., Gružinskis, V., Tamošiunas, V., Juozapavičius, A., Kašalynas, I., Ašmontas, S., Valušis, G., Steenson, P., Chow, W. H., Harrison, P., Lisauskas, A., Roskos, H. G., & Köhler, K. (2007). The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing. In W. Jantsch, & F. Schaffler (Eds.), Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (Vol. 893, pp. 1419-1420). (AIP Conference Proceedings; Vol. 893). AIP Publishing. https://doi.org/10.1063/1.2730437

Seliuta, Dalius ; Gružinskis, Viktoras ; Tamošiunas, Vincas et al. / The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing. Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. editor / Wolfgang Jantsch ; Friedrich Schaffler. Vol. 893 AIP Publishing, 2007. pp. 1419-1420 (AIP Conference Proceedings).

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title = "The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing",

abstract = "A well-pronounced asymmetry in I-V-characteristics within low, 4.2-80 K, temperatures is demonstrated in asymmetrically in-plane shaped modulation-doped GaAs/AlGaAs structures. The results are explained by the presence of two different electric field gradients - the bigradient effect - induced by the geometrical shape. The features of the effect are revealed; the possibility to use it for GHz-THz sensing is explored via development of asymmetrically-shaped GaAs/Al0.3Ga0.7As-based and In0.54Ga 0.46As-based bow-tie diodes. An effective bandwidth of 10 GHz - 1 THz and a sensitivity of about 5-6 V/W is achieved at room temperature.",

keywords = "N-n Junctions, diode, photovoltages",

author = "Dalius Seliuta and Viktoras Gru{\v z}inskis and Vincas Tamo{\v s}iunas and Au{\v s}rius Juozapavi{\v c}ius and Irmantas Ka{\v s}alynas and Steponas A{\v s}montas and Gintaras Valu{\v s}is and Paul Steenson and Chow, {Wai Heng} and Paul Harrison and Alvydas Lisauskas and Roskos, {Hartmut G.} and Klaus K{\"o}hler",

year = "2007",

month = apr,

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doi = "10.1063/1.2730437",

language = "English",

isbn = "9780735403970",

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booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",

address = "United States",

note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",

}

Seliuta, D, Gružinskis, V, Tamošiunas, V, Juozapavičius, A, Kašalynas, I, Ašmontas, S, Valušis, G, Steenson, P, Chow, WH, Harrison, P, Lisauskas, A, Roskos, HG & Köhler, K 2007, The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing. in W Jantsch & F Schaffler (eds), Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. vol. 893, AIP Conference Proceedings, vol. 893, AIP Publishing, pp. 1419-1420, 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24/07/06. https://doi.org/10.1063/1.2730437

The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing. / Seliuta, Dalius; Gružinskis, Viktoras; Tamošiunas, Vincas et al.
Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. ed. / Wolfgang Jantsch; Friedrich Schaffler. Vol. 893 AIP Publishing, 2007. p. 1419-1420 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing

AU - Seliuta, Dalius

AU - Gružinskis, Viktoras

AU - Tamošiunas, Vincas

AU - Juozapavičius, Aušrius

AU - Kašalynas, Irmantas

AU - Ašmontas, Steponas

AU - Valušis, Gintaras

AU - Steenson, Paul

AU - Chow, Wai Heng

AU - Harrison, Paul

AU - Lisauskas, Alvydas

AU - Roskos, Hartmut G.

AU - Köhler, Klaus

N1 - Conference code: 28

PY - 2007/4/10

Y1 - 2007/4/10

N2 - A well-pronounced asymmetry in I-V-characteristics within low, 4.2-80 K, temperatures is demonstrated in asymmetrically in-plane shaped modulation-doped GaAs/AlGaAs structures. The results are explained by the presence of two different electric field gradients - the bigradient effect - induced by the geometrical shape. The features of the effect are revealed; the possibility to use it for GHz-THz sensing is explored via development of asymmetrically-shaped GaAs/Al0.3Ga0.7As-based and In0.54Ga 0.46As-based bow-tie diodes. An effective bandwidth of 10 GHz - 1 THz and a sensitivity of about 5-6 V/W is achieved at room temperature.

AB - A well-pronounced asymmetry in I-V-characteristics within low, 4.2-80 K, temperatures is demonstrated in asymmetrically in-plane shaped modulation-doped GaAs/AlGaAs structures. The results are explained by the presence of two different electric field gradients - the bigradient effect - induced by the geometrical shape. The features of the effect are revealed; the possibility to use it for GHz-THz sensing is explored via development of asymmetrically-shaped GaAs/Al0.3Ga0.7As-based and In0.54Ga 0.46As-based bow-tie diodes. An effective bandwidth of 10 GHz - 1 THz and a sensitivity of about 5-6 V/W is achieved at room temperature.

KW - N-n Junctions

KW - diode

KW - photovoltages

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DO - 10.1063/1.2730437

M3 - Conference contribution

AN - SCOPUS:77958475016

SN - 9780735403970

VL - 893

T3 - AIP Conference Proceedings

SP - 1419

EP - 1420

BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B

A2 - Jantsch, Wolfgang

A2 - Schaffler, Friedrich

PB - AIP Publishing

T2 - 28th International Conference on the Physics of Semiconductors

Y2 - 24 July 2006 through 28 July 2006

ER -

Seliuta D, Gružinskis V, Tamošiunas V, Juozapavičius A, Kašalynas I, Ašmontas S et al. The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing. In Jantsch W, Schaffler F, editors, Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. Vol. 893. AIP Publishing. 2007. p. 1419-1420. (AIP Conference Proceedings). doi: 10.1063/1.2730437

The Two-Dimensional Bigradient Effect and Its Application for GHz-THz Sensing

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