Abstract
This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.
| Original language | English |
|---|---|
| Pages (from-to) | 422-426 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 206 |
| Early online date | 27 Feb 2003 |
| DOIs | |
| Publication status | Published - May 2003 |
| Externally published | Yes |
| Event | 13th International Conference on Ion Beam Modification of Materials - Kobe, Japan Duration: 1 Sep 2002 → 6 Sep 2002 Conference number: 13 |
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Donnelly, S. E., Vishnyakov, V. M., Carter, G., Terry, J., Haworth, L. I., Sermanni, P., & Birtcher, R. C. (2003). The use of cavities for gettering in silicon microelectronic devices. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 422-426. https://doi.org/10.1016/S0168-583X(03)00783-3