The use of cavities for gettering in silicon microelectronic devices

S. E. Donnelly; V. M. Vishnyakov; G. Carter; J. Terry; L. I. Haworth; P. Sermanni; R. C. Birtcher

doi:10.1016/S0168-583X(03)00783-3

The use of cavities for gettering in silicon microelectronic devices

S. E. Donnelly, V. M. Vishnyakov, G. Carter, J. Terry, L. I. Haworth, P. Sermanni, R. C. Birtcher

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.

Original language	English
Pages (from-to)	422-426
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	206
Early online date	27 Feb 2003
DOIs	https://doi.org/10.1016/S0168-583X(03)00783-3
Publication status	Published - May 2003
Externally published	Yes
Event	13th International Conference on Ion Beam Modification of Materials - Kobe, Japan Duration: 1 Sep 2002 → 6 Sep 2002 Conference number: 13

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10.1016/S0168-583X(03)00783-3

Cite this

@article{7f07a26072b4428db6034c8a9fc27ddb,

title = "The use of cavities for gettering in silicon microelectronic devices",

abstract = "This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.",

keywords = "Cavities, Gettering, MOSFET devices, Silicon, TEM",

author = "Donnelly, {S. E.} and Vishnyakov, {V. M.} and G. Carter and J. Terry and Haworth, {L. I.} and P. Sermanni and Birtcher, {R. C.}",

year = "2003",

month = may,

doi = "10.1016/S0168-583X(03)00783-3",

language = "English",

volume = "206",

pages = "422--426",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

note = "13th International Conference on Ion Beam Modification of Materials ; Conference date: 01-09-2002 Through 06-09-2002",

}

The use of cavities for gettering in silicon microelectronic devices. / Donnelly, S. E.; Vishnyakov, V. M.; Carter, G.; Terry, J.; Haworth, L. I.; Sermanni, P.; Birtcher, R. C.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 05.2003, p. 422-426.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - The use of cavities for gettering in silicon microelectronic devices

AU - Donnelly, S. E.

AU - Vishnyakov, V. M.

AU - Carter, G.

AU - Terry, J.

AU - Haworth, L. I.

AU - Sermanni, P.

AU - Birtcher, R. C.

N1 - Conference code: 13

PY - 2003/5

Y1 - 2003/5

N2 - This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.

AB - This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.

KW - Cavities

KW - Gettering

KW - MOSFET devices

KW - Silicon

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=0037568009&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(03)00783-3

DO - 10.1016/S0168-583X(03)00783-3

M3 - Conference article

AN - SCOPUS:0037568009

VL - 206

SP - 422

EP - 426

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

T2 - 13th International Conference on Ion Beam Modification of Materials

Y2 - 1 September 2002 through 6 September 2002

ER -

The use of cavities for gettering in silicon microelectronic devices

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