Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 422-426 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 206 |
| Early online date | 27 Feb 2003 |
| DOIs | |
| Publication status | Published - May 2003 |
| Externally published | Yes |
| Event | 13th International Conference on Ion Beam Modification of Materials - Kobe, Japan Duration: 1 Sep 2002 → 6 Sep 2002 Conference number: 13 |
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The use of cavities for gettering in silicon microelectronic devices. / Donnelly, S. E.; Vishnyakov, V. M.; Carter, G.; Terry, J.; Haworth, L. I.; Sermanni, P.; Birtcher, R. C.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 05.2003, p. 422-426.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - The use of cavities for gettering in silicon microelectronic devices
AU - Donnelly, S. E.
AU - Vishnyakov, V. M.
AU - Carter, G.
AU - Terry, J.
AU - Haworth, L. I.
AU - Sermanni, P.
AU - Birtcher, R. C.
PY - 2003/5
Y1 - 2003/5
N2 - This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.
AB - This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.
KW - Cavities
KW - Gettering
KW - MOSFET devices
KW - Silicon
KW - TEM
UR - http://www.scopus.com/inward/record.url?scp=0037568009&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(03)00783-3
DO - 10.1016/S0168-583X(03)00783-3
M3 - Conference article
VL - 206
SP - 422
EP - 426
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -