The use of cavities for gettering in silicon microelectronic devices

S. E. Donnelly, V. M. Vishnyakov, G. Carter, J. Terry, L. I. Haworth, P. Sermanni, R. C. Birtcher

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.
Original languageEnglish
Pages (from-to)422-426
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
Early online date27 Feb 2003
DOIs
Publication statusPublished - May 2003
Externally publishedYes
Event13th International Conference on Ion Beam Modification of Materials - Kobe, Japan
Duration: 1 Sep 20026 Sep 2002
Conference number: 13

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