This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Early online date||27 Feb 2003|
|Publication status||Published - May 2003|
|Event||13th International Conference on Ion Beam Modification of Materials - Kobe, Japan|
Duration: 1 Sep 2002 → 6 Sep 2002
Conference number: 13