Thermal effects in InGaAs/AlAsSb quantum-cascade lasers

C. A. Evans; V. D. Jovanović; D. Indjin; Z. Ikonić; P. Harrison

doi:10.1049/ip-opt:20060039

Thermal effects in InGaAs/AlAsSb quantum-cascade lasers

C. A. Evans, V. D. Jovanović, D. Indjin, Z. Ikonić, P. Harrison

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures.

Original language	English
Pages (from-to)	287-292
Number of pages	6
Journal	IEE Proceedings: Optoelectronics
Volume	153
Issue number	6
DOIs	https://doi.org/10.1049/ip-opt:20060039
Publication status	Published - 1 Dec 2006
Externally published	Yes

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title = "Thermal effects in InGaAs/AlAsSb quantum-cascade lasers",

abstract = "A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures.",

keywords = "indium compounds, III-V semiconductors, thermo-optical effects, gallium arsenide, aluminium compounds, finite difference methods, temperature distribution, quantum cascade lasers, infrared sources",

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T1 - Thermal effects in InGaAs/AlAsSb quantum-cascade lasers

AU - Evans, C. A.

AU - Jovanović, V. D.

AU - Indjin, D.

AU - Ikonić, Z.

AU - Harrison, P.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures.

AB - A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures.

KW - indium compounds

KW - III-V semiconductors

KW - thermo-optical effects

KW - gallium arsenide

KW - aluminium compounds

KW - finite difference methods

KW - temperature distribution

KW - quantum cascade lasers

KW - infrared sources

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DO - 10.1049/ip-opt:20060039

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JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

SN - 1350-2433

IS - 6

ER -

Thermal effects in InGaAs/AlAsSb quantum-cascade lasers

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