Abstract
Bismuth telluride (Bi2Te3) and its alloys are among the best thermoelectric materials at room temperature. Bi14Te13S8, a material with a similar crystal structure, contains sulfur that can potentially improve the thermoelectric performance through widening the band gap and reducing the lattice thermal conductivity. This compound forms in sulfur-added Bi2Te3 alloys. Here, a polycrystalline iodine-doped Bi14Te13S8 sample is investigated; an optimum iodine concentration of 1 at. % resulted in the power factor of 3.5 mW2·m-1·K-1 at room temperature. Iodine doping reduced the lattice thermal conductivity by more than 30% by enhancing the phonon scattering. An improved thermoelectric figure of merit zT of ∼0.29 at 520 K was obtained for 1-1.5 at. % iodine-doped Bi14Te13S8. First-principles calculations indicate that Bi14Te13S8 has a larger band gap compared to bismuth telluride, which allows for a reduction in the bipolar effect; however, a lower effective mass reduced the thermopower for a similar carrier concentration. This study demonstrates that tuned iodine doping can effectively optimize the thermoelectric performance of Bi14Te13S8, highlighting its contribution in multiphase sulfur-alloyed Bi2Te3-based materials.
Original language | English |
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Pages (from-to) | 1283-1291 |
Number of pages | 9 |
Journal | ACS Applied Electronic Materials |
Volume | 6 |
Issue number | 2 |
Early online date | 14 Feb 2024 |
DOIs | |
Publication status | Published - 27 Feb 2024 |
Externally published | Yes |