Three-dimensional analysis of dislocation networks in GaN using weak-beam dark-field electron tomography

J. S. Barnard, J. Sharp, J. R. Tong, P. A. Midgley

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

We have developed a new method of tomographically reconstructing extended three-dimensional dislocation networks using weak-beam dark-field (WBDF) imaging in a TEM. A series of WBDF images is recorded every few degrees over a large tilt range, while ensuring that the dark-field reflection used for imaging maintains a constant deviation parameter. With suitable filtering of the WBDF images prior to tomographic reconstruction, the three-dimensional distribution of dislocations is reproduced with high fidelity and high spatial resolution. The success of this approach is demonstrated for heteroepitaxial Mg-doped GaN films. The fidelity of the tomographic reconstruction varies with the dislocation line-vector and elastic anisotropy of the material.

Original languageEnglish
Pages (from-to)4901-4922
Number of pages22
JournalPhilosophical Magazine
Volume86
Issue number29-31
DOIs
Publication statusPublished - 11 Oct 2006
Externally publishedYes

Fingerprint

Dive into the research topics of 'Three-dimensional analysis of dislocation networks in GaN using weak-beam dark-field electron tomography'. Together they form a unique fingerprint.

Cite this