Three-dimensional analysis of dislocation networks in GaN using weak-beam dark-field electron tomography

We have developed a new method of tomographically reconstructing extended three-dimensional dislocation networks using weak-beam dark-field (WBDF) imaging in a TEM. A series of WBDF images is recorded every few degrees over a large tilt range, while ensuring that the dark-field reflection used for imaging maintains a constant deviation parameter. With suitable filtering of the WBDF images prior to tomographic reconstruction, the three-dimensional distribution of dislocations is reproduced with high fidelity and high spatial resolution. The success of this approach is demonstrated for heteroepitaxial Mg-doped GaN films. The fidelity of the tomographic reconstruction varies with the dislocation line-vector and elastic anisotropy of the material.