THz Electoluminescence from Shallow Level Impurities in Si/SiGe Heterostructures

S. A. Lynch, D. J. Paul, R. Bates, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, A. C. Cullis, Donald D. Arnone, C. R. Pidgeon, P. Murzyn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Numerous applications have been suggested for terahertz frequencies including medical imaging of skin cancer [Ref. 1], dental imaging [Ref. 2], telecommunications, security scanning, gas sensing, astronomy, molecular spectroscopy and the possible detection of biological agents [Ref. 3]. While p-Ge lasers do provide a THz source, they are impractical in most situations, as they require both liquid helium cryogenic temperatures and crossed electric and magnetic fields (Ref. 4]. Population inversion and THz emission has also been demonstrated in optically pumped phosphorous doped silicon [Ref. 5]. In this paper THz emission is demonstrated from electrically pumped boron doped Si/SiGe heterostructures.
Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2002
PublisherOSA - The Optical Society
ISBN (Print)1557527067
Publication statusPublished - 2002
Externally publishedYes
Event2022 Conference on Lasers and Electro-Optics - Long Beach, United States
Duration: 19 May 200222 May 2002


Conference2022 Conference on Lasers and Electro-Optics
Abbreviated titleCLEO 2002
Country/TerritoryUnited States
CityLong Beach


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