THz Electroluminescence from Si/SiGe Quantum Cascade Heterostructures

R. Bates; S. A. Lynch; D. J. Paul; Z. Ikonic; R. W. Kelsall; P. Harrison; D. J. Norris; A. C. Cullis; Donald D. Arnone; C. R. Pidgeon; P. Murzyn; A. Loudon

THz Electroluminescence from Si/SiGe Quantum Cascade Heterostructures

R. Bates, S. A. Lynch, D. J. Paul, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, A. C. Cullis, Donald D. Arnone, C. R. Pidgeon, P. Murzyn, A. Loudon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

There is an increasingly strong interest in the development of sources that emit radiation in the 1-10 THz frequency range for a number of appli cations. These include medical imaging of skin cancer (Ref-1), dental imaging (Ref. 2), telecommunications, security scanning, gas sensing, astronomy, molecular spectroscopy, and the possible detection of biological agents [Ref. 3]. While a number of THz sources are available, there are at present no compact, efficient, cheap and practical high-power solid-state sources such as light emitting diodes (LEDs) or lasers. Silicon is an excellent candidate for such a THz source as it is an inherently low loss material at these frequencies. This is mainly due to the absence of polar optical phonon scattering. Furthermore, since over 97% of all microelectronics is presently silicon based, the realisation of a silicon-based emitter could potentially allow integration with conventional silicon-based microelectronics.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics
Subtitle of host publication	CLEO 2002
Publisher	OSA - The Optical Society
ISBN (Print)	1557527067
Publication status	Published - 2002
Externally published	Yes
Event	2022 Conference on Lasers and Electro-Optics - Long Beach, United States Duration: 19 May 2002 → 22 May 2002

Conference

Conference	2022 Conference on Lasers and Electro-Optics
Abbreviated title	CLEO 2002
Country/Territory	United States
City	Long Beach
Period	19/05/02 → 22/05/02

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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https://opg.optica.org/abstract.cfm?uri=cleo-2002-CFB2Licence: Unspecified

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Bates, R., Lynch, S. A., Paul, D. J., Ikonic, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Cullis, A. C., Arnone, D. D., Pidgeon, C. R., Murzyn, P., & Loudon, A. (2002). THz Electroluminescence from Si/SiGe Quantum Cascade Heterostructures. In Conference on Lasers and Electro-Optics: CLEO 2002 [CFB2] OSA - The Optical Society. https://opg.optica.org/abstract.cfm?uri=cleo-2002-CFB2

@inproceedings{01751ea88f6540248ef47ce39ee078f9,

title = "THz Electroluminescence from Si/SiGe Quantum Cascade Heterostructures",

abstract = "There is an increasingly strong interest in the development of sources that emit radiation in the 1-10 THz frequency range for a number of appli cations. These include medical imaging of skin cancer (Ref-1), dental imaging (Ref. 2), telecommunications, security scanning, gas sensing, astronomy, molecular spectroscopy, and the possible detection of biological agents [Ref. 3]. While a number of THz sources are available, there are at present no compact, efficient, cheap and practical high-power solid-state sources such as light emitting diodes (LEDs) or lasers. Silicon is an excellent candidate for such a THz source as it is an inherently low loss material at these frequencies. This is mainly due to the absence of polar optical phonon scattering. Furthermore, since over 97% of all microelectronics is presently silicon based, the realisation of a silicon-based emitter could potentially allow integration with conventional silicon-based microelectronics.",

keywords = "Quantum Well Infrared Photodetectors, Semiconductor Quantum Wells, Si-Ge Alloys",

author = "R. Bates and Lynch, {S. A.} and Paul, {D. J.} and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Norris, {D. J.} and Cullis, {A. C.} and Arnone, {Donald D.} and Pidgeon, {C. R.} and P. Murzyn and A. Loudon",

year = "2002",

language = "English",

isbn = "1557527067",

booktitle = "Conference on Lasers and Electro-Optics",

publisher = "OSA - The Optical Society",

address = "United States",

note = "2022 Conference on Lasers and Electro-Optics, CLEO 2002 ; Conference date: 19-05-2002 Through 22-05-2002",

}

Bates, R, Lynch, SA, Paul, DJ, Ikonic, Z, Kelsall, RW, Harrison, P, Norris, DJ, Cullis, AC, Arnone, DD, Pidgeon, CR, Murzyn, P & Loudon, A 2002, THz Electroluminescence from Si/SiGe Quantum Cascade Heterostructures. in Conference on Lasers and Electro-Optics: CLEO 2002., CFB2, OSA - The Optical Society, 2022 Conference on Lasers and Electro-Optics, Long Beach, California, United States, 19/05/02. <https://opg.optica.org/abstract.cfm?uri=cleo-2002-CFB2>

TY - GEN

T1 - THz Electroluminescence from Si/SiGe Quantum Cascade Heterostructures

AU - Bates, R.

AU - Lynch, S. A.

AU - Paul, D. J.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Cullis, A. C.

AU - Arnone, Donald D.

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Loudon, A.

PY - 2002

Y1 - 2002

N2 - There is an increasingly strong interest in the development of sources that emit radiation in the 1-10 THz frequency range for a number of appli cations. These include medical imaging of skin cancer (Ref-1), dental imaging (Ref. 2), telecommunications, security scanning, gas sensing, astronomy, molecular spectroscopy, and the possible detection of biological agents [Ref. 3]. While a number of THz sources are available, there are at present no compact, efficient, cheap and practical high-power solid-state sources such as light emitting diodes (LEDs) or lasers. Silicon is an excellent candidate for such a THz source as it is an inherently low loss material at these frequencies. This is mainly due to the absence of polar optical phonon scattering. Furthermore, since over 97% of all microelectronics is presently silicon based, the realisation of a silicon-based emitter could potentially allow integration with conventional silicon-based microelectronics.

AB - There is an increasingly strong interest in the development of sources that emit radiation in the 1-10 THz frequency range for a number of appli cations. These include medical imaging of skin cancer (Ref-1), dental imaging (Ref. 2), telecommunications, security scanning, gas sensing, astronomy, molecular spectroscopy, and the possible detection of biological agents [Ref. 3]. While a number of THz sources are available, there are at present no compact, efficient, cheap and practical high-power solid-state sources such as light emitting diodes (LEDs) or lasers. Silicon is an excellent candidate for such a THz source as it is an inherently low loss material at these frequencies. This is mainly due to the absence of polar optical phonon scattering. Furthermore, since over 97% of all microelectronics is presently silicon based, the realisation of a silicon-based emitter could potentially allow integration with conventional silicon-based microelectronics.

KW - Quantum Well Infrared Photodetectors

KW - Semiconductor Quantum Wells

KW - Si-Ge Alloys

UR - http://www.scopus.com/inward/record.url?scp=85136990971&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85136990971

SN - 1557527067

BT - Conference on Lasers and Electro-Optics

PB - OSA - The Optical Society

T2 - 2022 Conference on Lasers and Electro-Optics

Y2 - 19 May 2002 through 22 May 2002

ER -

THz Electroluminescence from Si/SiGe Quantum Cascade Heterostructures

Abstract

Conference

UN SDGs

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