THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

C. R. Pidgeon, P. Murzyn, J. P.R. Wells, Z. Ikonic, R. W. Kelsall, P. Harrison, S. A. Lynch, D. J. Paul, D. D. Arnone, D. J. Robbins

Research output: Contribution to journalArticlepeer-review


We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω < ℏωLO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

Original languageEnglish
Pages (from-to)381-385
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Issue number1
Early online date24 Apr 2003
Publication statusPublished - 1 May 2003
Externally publishedYes


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