THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

C. R. Pidgeon; P. Murzyn; J. P.R. Wells; Z. Ikonic; R. W. Kelsall; P. Harrison; S. A. Lynch; D. J. Paul; D. D. Arnone; D. J. Robbins

doi:10.1002/pssb.200301784

THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

C. R. Pidgeon, P. Murzyn, J. P.R. Wells, Z. Ikonic, R. W. Kelsall, P. Harrison, S. A. Lynch, D. J. Paul, D. D. Arnone, D. J. Robbins

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Abstract

We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω < ℏω_LO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si_0.7Ge_0.3 wells.

Original language	English
Pages (from-to)	381-385
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	237
Issue number	1
Early online date	24 Apr 2003
DOIs	https://doi.org/10.1002/pssb.200301784
Publication status	Published - 1 May 2003
Externally published	Yes

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title = "THz intersubband dynamics in p-Si/SiGe quantum well emitter structures",

abstract = "We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω < ℏωLO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.",

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T1 - THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Wells, J. P.R.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Lynch, S. A.

AU - Paul, D. J.

AU - Arnone, D. D.

AU - Robbins, D. J.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω < ℏωLO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

AB - We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω < ℏωLO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

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SN - 0370-1972

IS - 1

ER -

THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

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