THz intersubband dynamics in p-Si/SiGe quantum well structures

C. R. Pidgeon, P. Murzyn, J. P. R. Wells, I. V. Bradley, Z. Ikonic, R. W. Kelsall, P. Harrison, S. A. Lynch, D. J. Paul, D. D. Arnone, D. J. Robbins, D. Norris, A. G. Cullis

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω < ℏωLO, utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement we determine a decay time of ∼10 ps. This is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

Original languageEnglish
Pages (from-to)904-907
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
Early online date25 Jan 2002
Publication statusPublished - 1 Mar 2002
Externally publishedYes


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