THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer

Dalius Seliuta; Vincas Tamošiunas; Edmundas Širmulis; Steponas Ašmontas; Algirdas Sužiedelis; Jonas Gradauskas; Gintaras Valušis; Paul Steenson; Wai Heng Chow; Paul Harrison; Alvydas Lisauskas; Hartmut G. Roskos; Klaus Köhler

doi:10.1063/1.1994544

THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer

Dalius Seliuta, Vincas Tamošiunas, Edmundas Širmulis, Steponas Ašmontas, Algirdas Sužiedelis, Jonas Gradauskas, Gintaras Valušis, Paul Steenson, Wai Heng Chow, Paul Harrison, Alvydas Lisauskas, Hartmut G. Roskos, Klaus Köhler

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present asymmetrically-shaped bow-tie diodes based on a modulation-doped GaAs/AlGaAs structure. One of the bow-tie leaves is metallized in order to concentrate the incident radiation into the apex of the other half which contains the 2DEG layer: Here the electrons are heated non-uniformly by incident radiation inducing a voltage signal over the ends of the device. The diode sensitivity at room temperature within 10 GHz - 0.8 THz is close to 0.3 V/W, while with an increase of frequency up to 2.52 THz it decreases due to weaker coupling. We consider options to improve the operation of the device.

Original language	English
Title of host publication	Physics of semiconductors
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Editors	José Menéndez, Chris G. Van de Walle
Publisher	AIP Publishing
Pages	1204-1205
Number of pages	2
Volume	772
ISBN (Print)	0735402574, 9780735402577
DOIs	https://doi.org/10.1063/1.1994544
Publication status	Published - 30 Jun 2005
Externally published	Yes
Event	27th International Conference on the Physics of Semiconductors - Flagstaff, United States Duration: 26 Jul 2004 → 30 Jul 2004 Conference number: 27

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	27th International Conference on the Physics of Semiconductors
Abbreviated title	ICPS-27
Country/Territory	United States
City	Flagstaff
Period	26/07/04 → 30/07/04

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Seliuta, D., Tamošiunas, V., Širmulis, E., Ašmontas, S., Sužiedelis, A., Gradauskas, J., Valušis, G., Steenson, P., Chow, W. H., Harrison, P., Lisauskas, A., Roskos, H. G., & Köhler, K. (2005). THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer. In J. Menéndez, & C. G. V. D. Walle (Eds.), Physics of semiconductors: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Vol. 772, pp. 1204-1205). (AIP Conference Proceedings; Vol. 772). AIP Publishing. https://doi.org/10.1063/1.1994544

Seliuta, Dalius ; Tamošiunas, Vincas ; Širmulis, Edmundas et al. / THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer. Physics of semiconductors: 27th International Conference on the Physics of Semiconductors, ICPS-27. editor / José Menéndez ; Chris G. Van de Walle. Vol. 772 AIP Publishing, 2005. pp. 1204-1205 (AIP Conference Proceedings).

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title = "THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer",

abstract = "We present asymmetrically-shaped bow-tie diodes based on a modulation-doped GaAs/AlGaAs structure. One of the bow-tie leaves is metallized in order to concentrate the incident radiation into the apex of the other half which contains the 2DEG layer: Here the electrons are heated non-uniformly by incident radiation inducing a voltage signal over the ends of the device. The diode sensitivity at room temperature within 10 GHz - 0.8 THz is close to 0.3 V/W, while with an increase of frequency up to 2.52 THz it decreases due to weaker coupling. We consider options to improve the operation of the device.",

keywords = "diode, bow-tie diodes",

author = "Dalius Seliuta and Vincas Tamo{\v s}iunas and Edmundas {\v S}irmulis and Steponas A{\v s}montas and Algirdas Su{\v z}iedelis and Jonas Gradauskas and Gintaras Valu{\v s}is and Paul Steenson and Chow, {Wai Heng} and Paul Harrison and Alvydas Lisauskas and Roskos, {Hartmut G.} and Klaus K{\"o}hler",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994544",

language = "English",

isbn = "0735402574",

volume = "772",

series = "AIP Conference Proceedings",

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editor = "Men{\'e}ndez, { Jos{\'e} } and Walle, {Chris G. Van de }",

booktitle = "Physics of semiconductors",

address = "United States",

note = "27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Seliuta, D, Tamošiunas, V, Širmulis, E, Ašmontas, S, Sužiedelis, A, Gradauskas, J, Valušis, G, Steenson, P, Chow, WH, Harrison, P, Lisauskas, A, Roskos, HG & Köhler, K 2005, THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer. in J Menéndez & CGVD Walle (eds), Physics of semiconductors: 27th International Conference on the Physics of Semiconductors, ICPS-27. vol. 772, AIP Conference Proceedings, vol. 772, AIP Publishing, pp. 1204-1205, 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, United States, 26/07/04. https://doi.org/10.1063/1.1994544

THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer. / Seliuta, Dalius; Tamošiunas, Vincas; Širmulis, Edmundas et al.

Physics of semiconductors: 27th International Conference on the Physics of Semiconductors, ICPS-27. ed. / José Menéndez; Chris G. Van de Walle. Vol. 772 AIP Publishing, 2005. p. 1204-1205 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer

AU - Seliuta, Dalius

AU - Tamošiunas, Vincas

AU - Širmulis, Edmundas

AU - Ašmontas, Steponas

AU - Sužiedelis, Algirdas

AU - Gradauskas, Jonas

AU - Valušis, Gintaras

AU - Steenson, Paul

AU - Chow, Wai Heng

AU - Harrison, Paul

AU - Lisauskas, Alvydas

AU - Roskos, Hartmut G.

AU - Köhler, Klaus

N1 - Conference code: 27

PY - 2005/6/30

Y1 - 2005/6/30

N2 - We present asymmetrically-shaped bow-tie diodes based on a modulation-doped GaAs/AlGaAs structure. One of the bow-tie leaves is metallized in order to concentrate the incident radiation into the apex of the other half which contains the 2DEG layer: Here the electrons are heated non-uniformly by incident radiation inducing a voltage signal over the ends of the device. The diode sensitivity at room temperature within 10 GHz - 0.8 THz is close to 0.3 V/W, while with an increase of frequency up to 2.52 THz it decreases due to weaker coupling. We consider options to improve the operation of the device.

AB - We present asymmetrically-shaped bow-tie diodes based on a modulation-doped GaAs/AlGaAs structure. One of the bow-tie leaves is metallized in order to concentrate the incident radiation into the apex of the other half which contains the 2DEG layer: Here the electrons are heated non-uniformly by incident radiation inducing a voltage signal over the ends of the device. The diode sensitivity at room temperature within 10 GHz - 0.8 THz is close to 0.3 V/W, while with an increase of frequency up to 2.52 THz it decreases due to weaker coupling. We consider options to improve the operation of the device.

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SN - 9780735402577

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T3 - AIP Conference Proceedings

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BT - Physics of semiconductors

A2 - Menéndez, José

A2 - Walle, Chris G. Van de

PB - AIP Publishing

T2 - 27th International Conference on the Physics of Semiconductors

Y2 - 26 July 2004 through 30 July 2004

ER -

Seliuta D, Tamošiunas V, Širmulis E, Ašmontas S, Sužiedelis A, Gradauskas J et al. THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer. In Menéndez J, Walle CGVD, editors, Physics of semiconductors: 27th International Conference on the Physics of Semiconductors, ICPS-27. Vol. 772. AIP Publishing. 2005. p. 1204-1205. (AIP Conference Proceedings). doi: 10.1063/1.1994544

THz/subTHz Detection by Asymmetrically-Shaped Bow-Tie Diodes Containing 2DEG Layer

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