Abstract
We present asymmetrically-shaped bow-tie diodes based on a modulation-doped GaAs/AlGaAs structure. One of the bow-tie leaves is metallized in order to concentrate the incident radiation into the apex of the other half which contains the 2DEG layer: Here the electrons are heated non-uniformly by incident radiation inducing a voltage signal over the ends of the device. The diode sensitivity at room temperature within 10 GHz - 0.8 THz is close to 0.3 V/W, while with an increase of frequency up to 2.52 THz it decreases due to weaker coupling. We consider options to improve the operation of the device.
| Original language | English |
|---|---|
| Title of host publication | Physics of semiconductors |
| Subtitle of host publication | 27th International Conference on the Physics of Semiconductors, ICPS-27 |
| Editors | José Menéndez, Chris G. Van de Walle |
| Publisher | AIP Publishing |
| Pages | 1204-1205 |
| Number of pages | 2 |
| Volume | 772 |
| ISBN (Print) | 0735402574, 9780735402577 |
| DOIs | |
| Publication status | Published - 30 Jun 2005 |
| Externally published | Yes |
| Event | 27th International Conference on the Physics of Semiconductors - Flagstaff, United States Duration: 26 Jul 2004 → 30 Jul 2004 Conference number: 27 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 772 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
Conference
| Conference | 27th International Conference on the Physics of Semiconductors |
|---|---|
| Abbreviated title | ICPS-27 |
| Country/Territory | United States |
| City | Flagstaff |
| Period | 26/07/04 → 30/07/04 |