TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

M. Barozzi, E. Iacob, J. A. Van Den Berg, M. A. Reading, C. Adelmann, M. Popovici, H. Tielens, M. Bersani

Research output: Contribution to journalArticle

Abstract

High-k dielectrics as SrxTi1-xOy (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs+ while using eucentric stage rotation.

Original languageEnglish
Pages (from-to)394-397
Number of pages4
JournalSurface and Interface Analysis
Volume45
Issue number1
DOIs
Publication statusPublished - 4 May 2012
Externally publishedYes

Fingerprint

Silicon
Secondary ion mass spectrometry
secondary ion mass spectrometry
atomic force microscopy
craters
silicon
Depth profiling
random access memory
Surface topography
erosion
artifacts
Erosion
Atomic force microscopy
topography
roughness
Surface roughness
Data storage equipment
causes
Substrates

Cite this

Barozzi, M., Iacob, E., Van Den Berg, J. A., Reading, M. A., Adelmann, C., Popovici, M., ... Bersani, M. (2012). TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM. Surface and Interface Analysis, 45(1), 394-397. https://doi.org/10.1002/sia.5038
Barozzi, M. ; Iacob, E. ; Van Den Berg, J. A. ; Reading, M. A. ; Adelmann, C. ; Popovici, M. ; Tielens, H. ; Bersani, M. / TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM. In: Surface and Interface Analysis. 2012 ; Vol. 45, No. 1. pp. 394-397.
@article{daa15860c5c04046b0f9910f2f6410e2,
title = "TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM",
abstract = "High-k dielectrics as SrxTi1-xOy (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs+ while using eucentric stage rotation.",
keywords = "AFM, ALD, SIMS, STO, TiN",
author = "M. Barozzi and E. Iacob and {Van Den Berg}, {J. A.} and Reading, {M. A.} and C. Adelmann and M. Popovici and H. Tielens and M. Bersani",
year = "2012",
month = "5",
day = "4",
doi = "10.1002/sia.5038",
language = "English",
volume = "45",
pages = "394--397",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
number = "1",

}

Barozzi, M, Iacob, E, Van Den Berg, JA, Reading, MA, Adelmann, C, Popovici, M, Tielens, H & Bersani, M 2012, 'TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM', Surface and Interface Analysis, vol. 45, no. 1, pp. 394-397. https://doi.org/10.1002/sia.5038

TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM. / Barozzi, M.; Iacob, E.; Van Den Berg, J. A.; Reading, M. A.; Adelmann, C.; Popovici, M.; Tielens, H.; Bersani, M.

In: Surface and Interface Analysis, Vol. 45, No. 1, 04.05.2012, p. 394-397.

Research output: Contribution to journalArticle

TY - JOUR

T1 - TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

AU - Barozzi, M.

AU - Iacob, E.

AU - Van Den Berg, J. A.

AU - Reading, M. A.

AU - Adelmann, C.

AU - Popovici, M.

AU - Tielens, H.

AU - Bersani, M.

PY - 2012/5/4

Y1 - 2012/5/4

N2 - High-k dielectrics as SrxTi1-xOy (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs+ while using eucentric stage rotation.

AB - High-k dielectrics as SrxTi1-xOy (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs+ while using eucentric stage rotation.

KW - AFM

KW - ALD

KW - SIMS

KW - STO

KW - TiN

UR - http://www.scopus.com/inward/record.url?scp=85028104031&partnerID=8YFLogxK

U2 - 10.1002/sia.5038

DO - 10.1002/sia.5038

M3 - Article

VL - 45

SP - 394

EP - 397

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 1

ER -