TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

M. Barozzi; E. Iacob; J. A. Van Den Berg; M. A. Reading; C. Adelmann; M. Popovici; H. Tielens; M. Bersani

doi:10.1002/sia.5038

TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

M. Barozzi, E. Iacob, J. A. Van Den Berg, M. A. Reading, C. Adelmann, M. Popovici, H. Tielens, M. Bersani

Research output: Contribution to journal › Article › peer-review

Abstract

High-k dielectrics as Sr_xTi_1-xO_y (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs⁺ while using eucentric stage rotation.

Original language	English
Pages (from-to)	394-397
Number of pages	4
Journal	Surface and Interface Analysis
Volume	45
Issue number	1
DOIs	https://doi.org/10.1002/sia.5038
Publication status	Published - 4 May 2012
Externally published	Yes

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title = "TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM",

abstract = "High-k dielectrics as SrxTi1-xOy (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs+ while using eucentric stage rotation.",

keywords = "AFM, ALD, SIMS, STO, TiN",

author = "M. Barozzi and E. Iacob and {Van Den Berg}, {J. A.} and Reading, {M. A.} and C. Adelmann and M. Popovici and H. Tielens and M. Bersani",

year = "2012",

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doi = "10.1002/sia.5038",

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journal = "Surface and Interface Analysis",

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TY - JOUR

T1 - TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

AU - Barozzi, M.

AU - Iacob, E.

AU - Van Den Berg, J. A.

AU - Reading, M. A.

AU - Adelmann, C.

AU - Popovici, M.

AU - Tielens, H.

AU - Bersani, M.

PY - 2012/5/4

Y1 - 2012/5/4

N2 - High-k dielectrics as SrxTi1-xOy (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs+ while using eucentric stage rotation.

AB - High-k dielectrics as SrxTi1-xOy (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs+ while using eucentric stage rotation.

KW - AFM

KW - ALD

KW - SIMS

KW - STO

KW - TiN

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U2 - 10.1002/sia.5038

DO - 10.1002/sia.5038

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JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 1

ER -

TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

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