TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

M. Barozzi, E. Iacob, J. A. Van Den Berg, M. A. Reading, C. Adelmann, M. Popovici, H. Tielens, M. Bersani

Research output: Contribution to journalArticlepeer-review


High-k dielectrics as SrxTi1-xOy (STO) are of great interest for the development of dynamic random access memory devices. The characterization of these nanolayers is important. Secondary ion mass spectrometry (SIMS) depth profiling through TiN and STO films is affected by strong artifacts in different ways. The erosion process causes surface topography modifications both in the TiN/STO/TiN layer system and in the silicon substrate. Atomic force microscopy analyses have been carried out on pristine TiN and STO film surfaces and at various crater depths. Very different roughness evolutions are identified for TiN or STO films, within the SIMS craters sputtered with 500 eV Cs+ while using eucentric stage rotation.

Original languageEnglish
Pages (from-to)394-397
Number of pages4
JournalSurface and Interface Analysis
Issue number1
Publication statusPublished - 4 May 2012
Externally publishedYes


Dive into the research topics of 'TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM'. Together they form a unique fingerprint.

Cite this