TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

Engineering & Materials Science

• Secondary ion mass spectrometry 100%
• Silicon 52%
• Depth profiling 36%
• High-k dielectric 34%
• Atomic force microscopy 28%
• Surface topography 26%
• Erosion 22%
• Surface roughness 18%
• Substrates 15%
• Data storage equipment 13%

Physics & Astronomy

• secondary ion mass spectrometry 68%
• atomic force microscopy 50%
• craters 50%
• silicon 35%
• random access memory 25%
• erosion 21%
• artifacts 20%
• topography 20%
• roughness 18%
• causes 13%
• characterization 12%

Chemistry

• Molecular Layer 85%
• Secondary Ion Mass Spectroscopy 72%
• Liquid Film 32%
• Depth Profiling 27%
• Dielectric Material 19%
• Atomic Force Microscopy 17%
• Surface 14%
• Modification 12%