Ti3SiC2-formation during Ti-C-Si multilayer deposition by magnetron sputtering at 650°c

V. Vishnyakov, J. Lu, P. Eklund, L. Hultman, J. Colligon

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti 3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed.

LanguageEnglish
Pages56-59
Number of pages4
JournalVacuum
Volume93
Early online date10 Jan 2013
DOIs
Publication statusPublished - Jul 2013
Externally publishedYes

Fingerprint

Magnetron sputtering
magnetron sputtering
Multilayers
Substrates
Magnetrons
magnetrons
titanium carbides
Titanium carbide
Silicides
silicides
High resolution transmission electron microscopy
Silicon carbide
atomic structure
silicon carbides
carbides
spectroscopy
Carbides
Raman spectroscopy
wafers
Thin films

Cite this

Vishnyakov, V. ; Lu, J. ; Eklund, P. ; Hultman, L. ; Colligon, J. / Ti3SiC2-formation during Ti-C-Si multilayer deposition by magnetron sputtering at 650°c. In: Vacuum. 2013 ; Vol. 93. pp. 56-59.
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Ti3SiC2-formation during Ti-C-Si multilayer deposition by magnetron sputtering at 650°c. / Vishnyakov, V.; Lu, J.; Eklund, P.; Hultman, L.; Colligon, J.

In: Vacuum, Vol. 93, 07.2013, p. 56-59.

Research output: Contribution to journalArticle

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T1 - Ti3SiC2-formation during Ti-C-Si multilayer deposition by magnetron sputtering at 650°c

AU - Vishnyakov, V.

AU - Lu, J.

AU - Eklund, P.

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AU - Colligon, J.

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AB - Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti 3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed.

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KW - Nano-laminate

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