Ti3SiC2-formation during Ti-C-Si multilayer deposition by magnetron sputtering at 650°c

V. Vishnyakov, J. Lu, P. Eklund, L. Hultman, J. Colligon

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Abstract

Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti 3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed.

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalVacuum
Volume93
Early online date10 Jan 2013
DOIs
Publication statusPublished - Jul 2013
Externally publishedYes

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