Topography development on selected inert gas and self-ion bombarded Si

V. Vishnyakov, G. Carter, D. T. Goddard, M. J. Nobes

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

An AFM and SEM study of the topography induced by 20 keV Si+, Ar+ and Xe+ ion bombardment of Si at 45 ° incidence angles and for ion fluences between 1017 and 1020 cm-2 has been undertaken at room temperature. All species generate an atomic scale random roughness, the magnitude of which does not increase extensively with ion fluence, suggesting the operation of a local relaxation process. This nanometre scale roughness forms, for Ar and Xe, a background for coarser micrometre scale structures such as pits, chevrons and waves. Apart from isolated etch pits Si+ irradiation generates no repetitive micrometre scale structures. Xe+ irradiation produces well developed transverse waves while Ar+ irradiation results in isolated chevron-like etch pit trains and ripple patches. This latter pattern evolves, with increasing ion fluence, to a corrugated facet structure. The reasons for the different behaviours are still not fully clarified.

Original languageEnglish
Pages (from-to)637-643
Number of pages7
JournalVacuum
Volume46
Issue number7
DOIs
Publication statusPublished - Jul 1995
Externally publishedYes

Fingerprint

Noble Gases
Inert gases
Topography
rare gases
topography
Irradiation
Ions
fluence
Surface roughness
irradiation
micrometers
ions
roughness
Relaxation processes
Ion bombardment
transverse waves
ripples
bombardment
flat surfaces
Scanning electron microscopy

Cite this

Vishnyakov, V. ; Carter, G. ; Goddard, D. T. ; Nobes, M. J. / Topography development on selected inert gas and self-ion bombarded Si. In: Vacuum. 1995 ; Vol. 46, No. 7. pp. 637-643.
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Topography development on selected inert gas and self-ion bombarded Si. / Vishnyakov, V.; Carter, G.; Goddard, D. T.; Nobes, M. J.

In: Vacuum, Vol. 46, No. 7, 07.1995, p. 637-643.

Research output: Contribution to journalArticle

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