@article{6406cac2423d4c629de976a84850b5e7,
title = "Toward Silicon-Based Lasers for Terahertz Sources",
abstract = "Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser.",
keywords = "Boron, Far infrared, Germanium, Impurity, Lifetime, Phosphorus, Pump-probe, Quantum cascade laser, Resonant tunneling diode (RTD), Silicon, Suicide, Terahertz, Waveguide",
author = "Lynch, {Stephen A.} and Paul, {Douglas J.} and Paul Townsend and Guy Matmon and Zhang Suet and Kelsall, {Robert W.} and Zoran Ikonic and Paul Harrison and Jing Zhang and Norris, {David J.} and Cullis, {Anthony G.} and Pidgeon, {Carl R.} and Pawel Murzyn and Ben Murdin and Mike Bain and Gamble, {Harry S.} and Ming Zhao and Ni, {Wei Xin}",
note = "Funding Information: Manuscript received October 31, 2005; revised August 24, 2006. This work was supported in part by the EU under Grant SHINE IST-2001-38035, in part by the U.S. DARPA under Air Force Contract F-19628-99-C-0074, and in part by the U.K. EPSRC under Grant GR/S27535/01.",
year = "2006",
month = nov,
day = "1",
doi = "10.1109/JSTQE.2006.884069",
language = "English",
volume = "12",
pages = "1570--1578",
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}