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Toward Silicon-Based Lasers for Terahertz Sources

Stephen A. Lynch, Douglas J. Paul, Paul Townsend, Guy Matmon, Zhang Suet, Robert W. Kelsall, Zoran Ikonic, Paul Harrison, Jing Zhang, David J. Norris, Anthony G. Cullis, Carl R. Pidgeon, Pawel Murzyn, Ben Murdin, Mike Bain, Harry S. Gamble, Ming Zhao, Wei Xin Ni

Research output: Contribution to journalArticlepeer-review

Abstract

Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser.

Original languageEnglish
Article number4032674
Pages (from-to)1570-1578
Number of pages9
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume12
Issue number6
DOIs
Publication statusPublished - 1 Nov 2006
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 3 - Good Health and Well-being
    SDG 3 Good Health and Well-being

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