Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications

D. J. Paul, S. A. Lynch, P. Townsend, Z. Ikonic, R. W. Kelsall, P. Harrison, S. L. Liew, D. J. Norris, A. G. Cullis, J. Zhang, M. Bain, H. S. Gamble, W. R. Tribe, D. D. Arnone

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical mode. A method of increasing the vertical confinement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical confinement. Electroluminescence is demonstrated at ∼3 THz (∼100 μm) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies. The effects of high doping levels in Si/SiGe quantum cascade structures is also investigated with impurity emission demonstrated rather than intersubband emission for the highest doping levels used in the cascade active regions.

Original languageEnglish
Article numberF4.1
Pages (from-to)12-21
Number of pages10
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 1 Dec 2004
Externally publishedYes
Event2004 MRS Fall Meeting: Symposium F – Group IV Semiconductor Nanostructures - Boston, United States
Duration: 29 Nov 20042 Dec 2004


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