Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications

D. J. Paul; S. A. Lynch; P. Townsend; Z. Ikonic; R. W. Kelsall; P. Harrison; S. L. Liew; D. J. Norris; A. G. Cullis; J. Zhang; M. Bain; H. S. Gamble; W. R. Tribe; D. D. Arnone

doi:10.1557/PROC-832-F4.1

Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications

D. J. Paul, S. A. Lynch, P. Townsend, Z. Ikonic, R. W. Kelsall, P. Harrison, S. L. Liew, D. J. Norris, A. G. Cullis, J. Zhang, M. Bain, H. S. Gamble, W. R. Tribe, D. D. Arnone

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical mode. A method of increasing the vertical confinement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical confinement. Electroluminescence is demonstrated at ∼3 THz (∼100 μm) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies. The effects of high doping levels in Si/SiGe quantum cascade structures is also investigated with impurity emission demonstrated rather than intersubband emission for the highest doping levels used in the cascade active regions.

Original language	English
Article number	F4.1
Pages (from-to)	12-21
Number of pages	10
Journal	Materials Research Society Symposium Proceedings
Volume	832
DOIs	https://doi.org/10.1557/PROC-832-F4.1
Publication status	Published - 1 Dec 2004
Externally published	Yes
Event	2004 MRS Fall Meeting: Symposium F – Group IV Semiconductor Nanostructures - Boston, United States Duration: 29 Nov 2004 → 2 Dec 2004

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Paul, D. J., Lynch, S. A., Townsend, P., Ikonic, Z., Kelsall, R. W., Harrison, P., Liew, S. L., Norris, D. J., Cullis, A. G., Zhang, J., Bain, M., Gamble, H. S., Tribe, W. R., & Arnone, D. D. (2004). Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications. Materials Research Society Symposium Proceedings, 832, 12-21. [F4.1]. https://doi.org/10.1557/PROC-832-F4.1

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title = "Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications",

abstract = "While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical mode. A method of increasing the vertical confinement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical confinement. Electroluminescence is demonstrated at ∼3 THz (∼100 μm) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies. The effects of high doping levels in Si/SiGe quantum cascade structures is also investigated with impurity emission demonstrated rather than intersubband emission for the highest doping levels used in the cascade active regions.",

keywords = "Cascade control systems, Doping (additives), Electroluminescence, Epitaxial growth, Laser applications, Light emission, Light polarization, Silicon compounds",

author = "Paul, {D. J.} and Lynch, {S. A.} and P. Townsend and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Liew, {S. L.} and Norris, {D. J.} and Cullis, {A. G.} and J. Zhang and M. Bain and Gamble, {H. S.} and Tribe, {W. R.} and Arnone, {D. D.}",

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doi = "10.1557/PROC-832-F4.1",

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note = "2004 MRS Fall Meeting : Symposium F – Group IV Semiconductor Nanostructures ; Conference date: 29-11-2004 Through 02-12-2004",

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T1 - Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications

AU - Paul, D. J.

AU - Lynch, S. A.

AU - Townsend, P.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Liew, S. L.

AU - Norris, D. J.

AU - Cullis, A. G.

AU - Zhang, J.

AU - Bain, M.

AU - Gamble, H. S.

AU - Tribe, W. R.

AU - Arnone, D. D.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical mode. A method of increasing the vertical confinement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical confinement. Electroluminescence is demonstrated at ∼3 THz (∼100 μm) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies. The effects of high doping levels in Si/SiGe quantum cascade structures is also investigated with impurity emission demonstrated rather than intersubband emission for the highest doping levels used in the cascade active regions.

AB - While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical mode. A method of increasing the vertical confinement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical confinement. Electroluminescence is demonstrated at ∼3 THz (∼100 μm) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies. The effects of high doping levels in Si/SiGe quantum cascade structures is also investigated with impurity emission demonstrated rather than intersubband emission for the highest doping levels used in the cascade active regions.

KW - Cascade control systems

KW - Doping (additives)

KW - Electroluminescence

KW - Epitaxial growth

KW - Laser applications

KW - Light emission

KW - Light polarization

KW - Silicon compounds

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U2 - 10.1557/PROC-832-F4.1

DO - 10.1557/PROC-832-F4.1

M3 - Conference article

AN - SCOPUS:23844493413

VL - 832

SP - 12

EP - 21

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 0272-9172

M1 - F4.1

T2 - 2004 MRS Fall Meeting

Y2 - 29 November 2004 through 2 December 2004

ER -

Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications

Abstract

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