Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup

Konstantina Lambrinou; Kai Arstila; Thomas Hantschel; Andreas Rummel; Zsolt Tokei; Marianna Pantouvaki; Kristof Croes; Piotr Czarnecki; Laure Carbonell; Olivier Richard; Stephan Kleindiek; Ingrid De Wolf; Wilfried Vandervorst

doi:10.1557/PROC-1249-F08-14

Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup

Konstantina Lambrinou, Kai Arstila, Thomas Hantschel, Andreas Rummel, Zsolt Tokei, Marianna Pantouvaki, Kristof Croes, Piotr Czarnecki, Laure Carbonell, Olivier Richard, Stephan Kleindiek, Ingrid De Wolf, Wilfried Vandervorst

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

This work aims at attaining a more complete understanding of the principles governing resistive contrast imaging (RCI) of copper/low-k interconnects used for dielectric breakdown studies in a nanoprober scanning electron microscope (SEM) system. RCI is employed in such in situ dielectric breakdown studies to facilitate the localization of interconnect defect sites related to various stages in the degradation process of the low-k dielectric material. This work shows that RCI is suitable for detecting high-resistance sites, like opens, in copper/low-k interconnects. Moreover, RCI demonstrates potential in locating defects that lie deep in the test structure and are, thus, not detectable by SEM. A model is also proposed to explain the formation of RCI images of specific interconnect test structures with complex layout.

Original language	English
Title of host publication	Symposia E/F - Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics
Editors	C. Bonafos, Y. Fujisaki, P. Dimitrakis, E. Tokumitsu
Publisher	Cambridge University Press
Pages	281-286
Number of pages	6
Volume	1249
ISBN (Print)	9781605112268, 1605112267
DOIs	https://doi.org/10.1557/PROC-1249-F08-14
Publication status	Published - 2010
Externally published	Yes
Event	2010 MRS Spring Meeting - San Francisco, United States Duration: 5 Apr 2010 → 9 Apr 2010 https://www.mrs.org/spring2010

Conference

Conference	2010 MRS Spring Meeting
Country/Territory	United States
City	San Francisco
Period	5/04/10 → 9/04/10
Internet address	https://www.mrs.org/spring2010

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Lambrinou, K., Arstila, K., Hantschel, T., Rummel, A., Tokei, Z., Pantouvaki, M., Croes, K., Czarnecki, P., Carbonell, L., Richard, O., Kleindiek, S., De Wolf, I., & Vandervorst, W. (2010). Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup. In C. Bonafos, Y. Fujisaki, P. Dimitrakis, & E. Tokumitsu (Eds.), Symposia E/F - Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics (Vol. 1249, pp. 281-286). Cambridge University Press. https://doi.org/10.1557/PROC-1249-F08-14

Lambrinou, Konstantina ; Arstila, Kai ; Hantschel, Thomas et al. / Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup. Symposia E/F - Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics. editor / C. Bonafos ; Y. Fujisaki ; P. Dimitrakis ; E. Tokumitsu. Vol. 1249 Cambridge University Press, 2010. pp. 281-286

@inproceedings{e25619860b71465296bd067dfb437bb5,

title = "Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup",

abstract = "This work aims at attaining a more complete understanding of the principles governing resistive contrast imaging (RCI) of copper/low-k interconnects used for dielectric breakdown studies in a nanoprober scanning electron microscope (SEM) system. RCI is employed in such in situ dielectric breakdown studies to facilitate the localization of interconnect defect sites related to various stages in the degradation process of the low-k dielectric material. This work shows that RCI is suitable for detecting high-resistance sites, like opens, in copper/low-k interconnects. Moreover, RCI demonstrates potential in locating defects that lie deep in the test structure and are, thus, not detectable by SEM. A model is also proposed to explain the formation of RCI images of specific interconnect test structures with complex layout.",

keywords = "Defects, Scanning electron microscopy (SEM), Dielectric properties",

author = "Konstantina Lambrinou and Kai Arstila and Thomas Hantschel and Andreas Rummel and Zsolt Tokei and Marianna Pantouvaki and Kristof Croes and Piotr Czarnecki and Laure Carbonell and Olivier Richard and Stephan Kleindiek and {De Wolf}, Ingrid and Wilfried Vandervorst",

year = "2010",

doi = "10.1557/PROC-1249-F08-14",

language = "English",

isbn = "9781605112268",

volume = "1249",

pages = "281--286",

editor = "C. Bonafos and Y. Fujisaki and P. Dimitrakis and E. Tokumitsu",

booktitle = "Symposia E/F - Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics",

publisher = "Cambridge University Press",

address = "United Kingdom",

note = "2010 MRS Spring Meeting ; Conference date: 05-04-2010 Through 09-04-2010",

url = "https://www.mrs.org/spring2010",

}

Lambrinou, K, Arstila, K, Hantschel, T, Rummel, A, Tokei, Z, Pantouvaki, M, Croes, K, Czarnecki, P, Carbonell, L, Richard, O, Kleindiek, S, De Wolf, I & Vandervorst, W 2010, Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup. in C Bonafos, Y Fujisaki, P Dimitrakis & E Tokumitsu (eds), Symposia E/F - Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics. vol. 1249, Cambridge University Press, pp. 281-286, 2010 MRS Spring Meeting, San Francisco, California, United States, 5/04/10. https://doi.org/10.1557/PROC-1249-F08-14

Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup. / Lambrinou, Konstantina; Arstila, Kai; Hantschel, Thomas et al.

Symposia E/F - Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics. ed. / C. Bonafos; Y. Fujisaki; P. Dimitrakis; E. Tokumitsu. Vol. 1249 Cambridge University Press, 2010. p. 281-286.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup

AU - Lambrinou, Konstantina

AU - Arstila, Kai

AU - Hantschel, Thomas

AU - Rummel, Andreas

AU - Tokei, Zsolt

AU - Pantouvaki, Marianna

AU - Croes, Kristof

AU - Czarnecki, Piotr

AU - Carbonell, Laure

AU - Richard, Olivier

AU - Kleindiek, Stephan

AU - De Wolf, Ingrid

AU - Vandervorst, Wilfried

PY - 2010

Y1 - 2010

N2 - This work aims at attaining a more complete understanding of the principles governing resistive contrast imaging (RCI) of copper/low-k interconnects used for dielectric breakdown studies in a nanoprober scanning electron microscope (SEM) system. RCI is employed in such in situ dielectric breakdown studies to facilitate the localization of interconnect defect sites related to various stages in the degradation process of the low-k dielectric material. This work shows that RCI is suitable for detecting high-resistance sites, like opens, in copper/low-k interconnects. Moreover, RCI demonstrates potential in locating defects that lie deep in the test structure and are, thus, not detectable by SEM. A model is also proposed to explain the formation of RCI images of specific interconnect test structures with complex layout.

AB - This work aims at attaining a more complete understanding of the principles governing resistive contrast imaging (RCI) of copper/low-k interconnects used for dielectric breakdown studies in a nanoprober scanning electron microscope (SEM) system. RCI is employed in such in situ dielectric breakdown studies to facilitate the localization of interconnect defect sites related to various stages in the degradation process of the low-k dielectric material. This work shows that RCI is suitable for detecting high-resistance sites, like opens, in copper/low-k interconnects. Moreover, RCI demonstrates potential in locating defects that lie deep in the test structure and are, thus, not detectable by SEM. A model is also proposed to explain the formation of RCI images of specific interconnect test structures with complex layout.

KW - Defects

KW - Scanning electron microscopy (SEM)

KW - Dielectric properties

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U2 - 10.1557/PROC-1249-F08-14

DO - 10.1557/PROC-1249-F08-14

M3 - Conference contribution

AN - SCOPUS:78650312348

SN - 9781605112268

SN - 1605112267

VL - 1249

SP - 281

EP - 286

BT - Symposia E/F - Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics

A2 - Bonafos, C.

A2 - Fujisaki, Y.

A2 - Dimitrakis, P.

A2 - Tokumitsu, E.

PB - Cambridge University Press

T2 - 2010 MRS Spring Meeting

Y2 - 5 April 2010 through 9 April 2010

ER -

Lambrinou K, Arstila K, Hantschel T, Rummel A, Tokei Z, Pantouvaki M et al. Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup. In Bonafos C, Fujisaki Y, Dimitrakis P, Tokumitsu E, editors, Symposia E/F - Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics. Vol. 1249. Cambridge University Press. 2010. p. 281-286 doi: 10.1557/PROC-1249-F08-14

Towards the Understanding of Restive Contrast Imaging in in-situ Dielectric Breakdown Studies Using a Nanoprober Setup

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