Transimpedance optical preamplifier having a common-collector front end

M. J.N. Sibley; R. T. Unwin

doi:10.1049/el:19820673

Transimpedance optical preamplifier having a common-collector front end

M. J.N. Sibley, R. T. Unwin

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A simple PIN photodiode-bipolar transistor (PIN-BJT), direct-coupled, transimpedance, optical preamplifier suitable for fabrication in monolithic IC form is described. The preamplifier basically consists of a common-collector, commonemitter configuration with shunt feedback. Measurements indicate that the receiver is capable of a sensitivity of −35.8 dBm at 140 Mbit/s for an error rate of 10^-9.

Original language	English
Pages (from-to)	985-986
Number of pages	2
Journal	Electronics Letters
Volume	18
Issue number	23
DOIs	https://doi.org/10.1049/el:19820673
Publication status	Published - 11 Nov 1982

Access to Document

10.1049/el:19820673Licence: Unspecified

Cite this

@article{dc16e7097c064f219fdca3be30274ac2,

title = "Transimpedance optical preamplifier having a common-collector front end",

abstract = "A simple PIN photodiode-bipolar transistor (PIN-BJT), direct-coupled, transimpedance, optical preamplifier suitable for fabrication in monolithic IC form is described. The preamplifier basically consists of a common-collector, commonemitter configuration with shunt feedback. Measurements indicate that the receiver is capable of a sensitivity of −35.8 dBm at 140 Mbit/s for an error rate of 10-9.",

keywords = "Optoelectronics, Preamplifiers, Semiconductor devices and materials",

author = "Sibley, {M. J.N.} and Unwin, {R. T.}",

year = "1982",

month = nov,

day = "11",

doi = "10.1049/el:19820673",

language = "English",

volume = "18",

pages = "985--986",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "IET",

number = "23",

}

TY - JOUR

T1 - Transimpedance optical preamplifier having a common-collector front end

AU - Sibley, M. J.N.

AU - Unwin, R. T.

PY - 1982/11/11

Y1 - 1982/11/11

N2 - A simple PIN photodiode-bipolar transistor (PIN-BJT), direct-coupled, transimpedance, optical preamplifier suitable for fabrication in monolithic IC form is described. The preamplifier basically consists of a common-collector, commonemitter configuration with shunt feedback. Measurements indicate that the receiver is capable of a sensitivity of −35.8 dBm at 140 Mbit/s for an error rate of 10-9.

AB - A simple PIN photodiode-bipolar transistor (PIN-BJT), direct-coupled, transimpedance, optical preamplifier suitable for fabrication in monolithic IC form is described. The preamplifier basically consists of a common-collector, commonemitter configuration with shunt feedback. Measurements indicate that the receiver is capable of a sensitivity of −35.8 dBm at 140 Mbit/s for an error rate of 10-9.

KW - Optoelectronics

KW - Preamplifiers

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0020203166&partnerID=8YFLogxK

U2 - 10.1049/el:19820673

DO - 10.1049/el:19820673

M3 - Article

AN - SCOPUS:0020203166

VL - 18

SP - 985

EP - 986

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 23

ER -

Transimpedance optical preamplifier having a common-collector front end

Abstract

Access to Document

Other files and links

Fingerprint

Cite this