Transit-time limitations in p-i-n photodiodes

M. J N Sibley; J. Bellon

doi:10.1002/1098-2760(20000905)26:5<282::AID-MOP2>3.0.CO;2-H

Transit-time limitations in p-i-n photodiodes

M. J N Sibley, J. Bellon

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current is found by simple integration. Experimental results obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations.

Original language	English
Pages (from-to)	282-286
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	26
Issue number	5
Early online date	18 Jul 2000
DOIs	https://doi.org/10.1002/1098-2760(20000905)26:5<282::AID-MOP2>3.0.CO;2-H
Publication status	Published - 5 Sep 2000

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10.1002/1098-2760(20000905)26:5<282::AID-MOP2>3.0.CO;2-HLicence: Unspecified

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abstract = "A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current is found by simple integration. Experimental results obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations.",

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AB - A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current is found by simple integration. Experimental results obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations.

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KW - frequency response of photodiodes

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Transit-time limitations in p-i-n photodiodes

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