Transit-time limitations in p-i-n photodiodes

M. J N Sibley, J. Bellon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current is found by simple integration. Experimental results obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations.

Original languageEnglish
Pages (from-to)282-286
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume26
Issue number5
Early online date18 Jul 2000
DOIs
Publication statusPublished - 5 Sep 2000

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