A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current is found by simple integration. Experimental results obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations.
|Number of pages
|Microwave and Optical Technology Letters
|Early online date
|18 Jul 2000
|Published - 5 Sep 2000