Ultra low energy (100-2000 eV) boron implantation into crystalline and silicon-preamorphized silicon

A. Bousetta, J. A. Van den Berg, R. Valizadeh, D. G. Armour, P. C. Zalm

Research output: Contribution to journalArticle

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Abstract

Very low energy (<1 keV) B+ ion implantation has been carried out on both crystalline and silicon-preamorphized silicon. The amorphous layer depth was determined using Rutherford backscattering analysis (RBS). The penetration depth and channelling tail of B+ ions into silicon was studied as a function of ion energy (100-2000 eV) and low temperature regrowth/annealing (T < 600° C), using secondary ion mass spectroscopy (SIMS). These studies also involved low energy (40-60 eV) ion beam deposition (IBD) of 10-20 nm isotopic 28Si+ cap layer at room temperature to enable accurate SIMS depth profile measurements to be carried out. The results show the extent of the channelling tails at these low energies and indicate that sub 40 nm p+-n junctions with estimated carrier concentrations as high as 1020 cm-3 can be obtained.

Original languageEnglish
Pages (from-to)565-568
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume55
Issue number1-4
DOIs
Publication statusPublished - 2 Apr 1991
Externally publishedYes

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Boron
Silicon
implantation
boron
Ions
Crystalline materials
silicon
ions
mass spectroscopy
Spectroscopy
energy
Rutherford backscattering spectroscopy
p-n junctions
caps
Ion implantation
Ion beams
Carrier concentration
ion implantation
backscattering
penetration

Cite this

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abstract = "Very low energy (<1 keV) B+ ion implantation has been carried out on both crystalline and silicon-preamorphized silicon. The amorphous layer depth was determined using Rutherford backscattering analysis (RBS). The penetration depth and channelling tail of B+ ions into silicon was studied as a function of ion energy (100-2000 eV) and low temperature regrowth/annealing (T < 600° C), using secondary ion mass spectroscopy (SIMS). These studies also involved low energy (40-60 eV) ion beam deposition (IBD) of 10-20 nm isotopic 28Si+ cap layer at room temperature to enable accurate SIMS depth profile measurements to be carried out. The results show the extent of the channelling tails at these low energies and indicate that sub 40 nm p+-n junctions with estimated carrier concentrations as high as 1020 cm-3 can be obtained.",
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Ultra low energy (100-2000 eV) boron implantation into crystalline and silicon-preamorphized silicon. / Bousetta, A.; Van den Berg, J. A.; Valizadeh, R.; Armour, D. G.; Zalm, P. C.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 55, No. 1-4, 02.04.1991, p. 565-568.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultra low energy (100-2000 eV) boron implantation into crystalline and silicon-preamorphized silicon

AU - Bousetta, A.

AU - Van den Berg, J. A.

AU - Valizadeh, R.

AU - Armour, D. G.

AU - Zalm, P. C.

PY - 1991/4/2

Y1 - 1991/4/2

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AB - Very low energy (<1 keV) B+ ion implantation has been carried out on both crystalline and silicon-preamorphized silicon. The amorphous layer depth was determined using Rutherford backscattering analysis (RBS). The penetration depth and channelling tail of B+ ions into silicon was studied as a function of ion energy (100-2000 eV) and low temperature regrowth/annealing (T < 600° C), using secondary ion mass spectroscopy (SIMS). These studies also involved low energy (40-60 eV) ion beam deposition (IBD) of 10-20 nm isotopic 28Si+ cap layer at room temperature to enable accurate SIMS depth profile measurements to be carried out. The results show the extent of the channelling tails at these low energies and indicate that sub 40 nm p+-n junctions with estimated carrier concentrations as high as 1020 cm-3 can be obtained.

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JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

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