Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition

M. Popovici, A. Redolfi, M. Aoulaiche, Jakob Van Den Berg, B. Douhard, J. Swerts, P. Bailey, B. Kaczer, B. Groven, J. Meersschaut, T. Conard, A. Moussa, C. Adelmann, A. Delabie, P. Fazan, S. Van Elshocht, M. Jurczak

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The impact of different Ru precursors and/or deposition methods on the electrical characteristics of Ru/SrTiOx/Ru capacitors has been investigated. The observed increase of the leakage current density (Jg) and the equivalent oxide thickness (EOT) for ALD (atomic layer deposition) deposited Ru layers compared to PVD (physical vapor deposition) deposited ones was found to be caused by a SrRuTiOx layer formation at the SrTiOx/Ru interface aided by the presence of the oxygen co-reactant used during the ALD, regardless of the precursor used.
Original languageEnglish
Pages (from-to)108-112
Number of pages5
JournalMicroelectronic Engineering
Early online date16 Apr 2015
Publication statusPublished - 1 Nov 2015


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