Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition

M. Popovici, A. Redolfi, M. Aoulaiche, Jakob Van Den Berg, B. Douhard, J. Swerts, P. Bailey, B. Kaczer, B. Groven, J. Meersschaut, T. Conard, A. Moussa, C. Adelmann, A. Delabie, P. Fazan, S. Van Elshocht, M. Jurczak

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The impact of different Ru precursors and/or deposition methods on the electrical characteristics of Ru/SrTiOx/Ru capacitors has been investigated. The observed increase of the leakage current density (Jg) and the equivalent oxide thickness (EOT) for ALD (atomic layer deposition) deposited Ru layers compared to PVD (physical vapor deposition) deposited ones was found to be caused by a SrRuTiOx layer formation at the SrTiOx/Ru interface aided by the presence of the oxygen co-reactant used during the ALD, regardless of the precursor used.
Original languageEnglish
Pages (from-to)108-112
Number of pages5
JournalMicroelectronic Engineering
Volume147
Early online date16 Apr 2015
DOIs
Publication statusPublished - 1 Nov 2015

Fingerprint

Atomic layer deposition
atomic layer epitaxy
capacitors
Capacitors
degradation
Degradation
Physical vapor deposition
Leakage currents
Oxides
leakage
Current density
vapor deposition
current density
Oxygen
oxides
oxygen

Cite this

Popovici, M. ; Redolfi, A. ; Aoulaiche, M. ; Van Den Berg, Jakob ; Douhard, B. ; Swerts, J. ; Bailey, P. ; Kaczer, B. ; Groven, B. ; Meersschaut, J. ; Conard, T. ; Moussa, A. ; Adelmann, C. ; Delabie, A. ; Fazan, P. ; Van Elshocht, S. ; Jurczak, M. / Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition. In: Microelectronic Engineering. 2015 ; Vol. 147. pp. 108-112.
@article{4dbf07e8a61144ba9bbe37cba8e65e51,
title = "Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition",
abstract = "The impact of different Ru precursors and/or deposition methods on the electrical characteristics of Ru/SrTiOx/Ru capacitors has been investigated. The observed increase of the leakage current density (Jg) and the equivalent oxide thickness (EOT) for ALD (atomic layer deposition) deposited Ru layers compared to PVD (physical vapor deposition) deposited ones was found to be caused by a SrRuTiOx layer formation at the SrTiOx/Ru interface aided by the presence of the oxygen co-reactant used during the ALD, regardless of the precursor used.",
keywords = "Metal–insulator–metal capacitor, Strontium titanate, Ruthenium, Atomic layer deposition",
author = "M. Popovici and A. Redolfi and M. Aoulaiche and {Van Den Berg}, Jakob and B. Douhard and J. Swerts and P. Bailey and B. Kaczer and B. Groven and J. Meersschaut and T. Conard and A. Moussa and C. Adelmann and A. Delabie and P. Fazan and {Van Elshocht}, S. and M. Jurczak",
year = "2015",
month = "11",
day = "1",
doi = "10.1016/j.mee.2015.04.076",
language = "English",
volume = "147",
pages = "108--112",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Popovici, M, Redolfi, A, Aoulaiche, M, Van Den Berg, J, Douhard, B, Swerts, J, Bailey, P, Kaczer, B, Groven, B, Meersschaut, J, Conard, T, Moussa, A, Adelmann, C, Delabie, A, Fazan, P, Van Elshocht, S & Jurczak, M 2015, 'Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition', Microelectronic Engineering, vol. 147, pp. 108-112. https://doi.org/10.1016/j.mee.2015.04.076

Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition. / Popovici, M.; Redolfi, A.; Aoulaiche, M.; Van Den Berg, Jakob; Douhard, B.; Swerts, J.; Bailey, P.; Kaczer, B.; Groven, B.; Meersschaut, J.; Conard, T.; Moussa, A.; Adelmann, C.; Delabie, A.; Fazan, P.; Van Elshocht, S.; Jurczak, M.

In: Microelectronic Engineering, Vol. 147, 01.11.2015, p. 108-112.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition

AU - Popovici, M.

AU - Redolfi, A.

AU - Aoulaiche, M.

AU - Van Den Berg, Jakob

AU - Douhard, B.

AU - Swerts, J.

AU - Bailey, P.

AU - Kaczer, B.

AU - Groven, B.

AU - Meersschaut, J.

AU - Conard, T.

AU - Moussa, A.

AU - Adelmann, C.

AU - Delabie, A.

AU - Fazan, P.

AU - Van Elshocht, S.

AU - Jurczak, M.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The impact of different Ru precursors and/or deposition methods on the electrical characteristics of Ru/SrTiOx/Ru capacitors has been investigated. The observed increase of the leakage current density (Jg) and the equivalent oxide thickness (EOT) for ALD (atomic layer deposition) deposited Ru layers compared to PVD (physical vapor deposition) deposited ones was found to be caused by a SrRuTiOx layer formation at the SrTiOx/Ru interface aided by the presence of the oxygen co-reactant used during the ALD, regardless of the precursor used.

AB - The impact of different Ru precursors and/or deposition methods on the electrical characteristics of Ru/SrTiOx/Ru capacitors has been investigated. The observed increase of the leakage current density (Jg) and the equivalent oxide thickness (EOT) for ALD (atomic layer deposition) deposited Ru layers compared to PVD (physical vapor deposition) deposited ones was found to be caused by a SrRuTiOx layer formation at the SrTiOx/Ru interface aided by the presence of the oxygen co-reactant used during the ALD, regardless of the precursor used.

KW - Metal–insulator–metal capacitor

KW - Strontium titanate

KW - Ruthenium

KW - Atomic layer deposition

U2 - 10.1016/j.mee.2015.04.076

DO - 10.1016/j.mee.2015.04.076

M3 - Article

VL - 147

SP - 108

EP - 112

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -