Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium

M. Popovici, Annelies Delabie, Christoph Adelmann, Johan Meersschaut, Alexis Franquet, Massimo Tallarid, J. Van Den Berg, Olivier Richard, Johan Swerts, Kazuyuki Tomida, Min-Soo Kim, Hilde Tielens, Hugo Bender, Thierry Conard, Malgorzata Jurczak, Sven Van Elshocht, Dieter Schmeisser

Research output: Contribution to journalArticle

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Abstract

Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
LanguageEnglish
PagesN23-N27
JournalECS Journal of Solid State Science and Technology
Volume2
Issue number1
Early online date30 Nov 2012
DOIs
Publication statusPublished - 2013

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Ruthenium
Graphite
Atomic layer deposition
Graphene
Ion implantation
Electron energy loss spectroscopy
Electron microscopy
Doping (additives)
titanium dioxide
Spectroscopy
Ions
Semiconductor materials
Imaging techniques
Fabrication
Atoms
Defects

Cite this

Popovici, M., Delabie, A., Adelmann, C., Meersschaut, J., Franquet, A., Tallarid, M., ... Schmeisser, D. (2013). Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium. ECS Journal of Solid State Science and Technology, 2(1), N23-N27. https://doi.org/10.1149/2.035301jss
Popovici, M. ; Delabie, Annelies ; Adelmann, Christoph ; Meersschaut, Johan ; Franquet, Alexis ; Tallarid, Massimo ; Van Den Berg, J. ; Richard, Olivier ; Swerts, Johan ; Tomida, Kazuyuki ; Kim, Min-Soo ; Tielens, Hilde ; Bender, Hugo ; Conard, Thierry ; Jurczak, Malgorzata ; Van Elshocht, Sven ; Schmeisser, Dieter. / Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium. In: ECS Journal of Solid State Science and Technology. 2013 ; Vol. 2, No. 1. pp. N23-N27.
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Popovici, M, Delabie, A, Adelmann, C, Meersschaut, J, Franquet, A, Tallarid, M, Van Den Berg, J, Richard, O, Swerts, J, Tomida, K, Kim, M-S, Tielens, H, Bender, H, Conard, T, Jurczak, M, Van Elshocht, S & Schmeisser, D 2013, 'Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium', ECS Journal of Solid State Science and Technology, vol. 2, no. 1, pp. N23-N27. https://doi.org/10.1149/2.035301jss

Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium. / Popovici, M.; Delabie, Annelies; Adelmann, Christoph; Meersschaut, Johan; Franquet, Alexis; Tallarid, Massimo; Van Den Berg, J.; Richard, Olivier; Swerts, Johan; Tomida, Kazuyuki; Kim, Min-Soo; Tielens, Hilde; Bender, Hugo; Conard, Thierry; Jurczak, Malgorzata; Van Elshocht, Sven; Schmeisser, Dieter.

In: ECS Journal of Solid State Science and Technology, Vol. 2, No. 1, 2013, p. N23-N27.

Research output: Contribution to journalArticle

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AU - Franquet, Alexis

AU - Tallarid, Massimo

AU - Van Den Berg, J.

AU - Richard, Olivier

AU - Swerts, Johan

AU - Tomida, Kazuyuki

AU - Kim, Min-Soo

AU - Tielens, Hilde

AU - Bender, Hugo

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