Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium

M. Popovici, Annelies Delabie, Christoph Adelmann, Johan Meersschaut, Alexis Franquet, Massimo Tallarid, J. Van Den Berg, Olivier Richard, Johan Swerts, Kazuyuki Tomida, Min-Soo Kim, Hilde Tielens, Hugo Bender, Thierry Conard, Malgorzata Jurczak, Sven Van Elshocht, Dieter Schmeisser

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
Original languageEnglish
Pages (from-to)N23-N27
JournalECS Journal of Solid State Science and Technology
Issue number1
Early online date30 Nov 2012
Publication statusPublished - 2013


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