Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium

M. Popovici; Annelies Delabie; Christoph Adelmann; Johan Meersschaut; Alexis Franquet; Massimo Tallarid; J. Van Den Berg; Olivier Richard; Johan Swerts; Kazuyuki Tomida; Min-Soo Kim; Hilde Tielens; Hugo Bender; Thierry Conard; Malgorzata Jurczak; Sven Van Elshocht; Dieter Schmeisser

doi:10.1149/2.035301jss

Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium

M. Popovici, Annelies Delabie, Christoph Adelmann, Johan Meersschaut, Alexis Franquet, Massimo Tallarid, J. Van Den Berg, Olivier Richard, Johan Swerts, Kazuyuki Tomida, Min-Soo Kim, Hilde Tielens, Hugo Bender, Thierry Conard, Malgorzata Jurczak, Sven Van Elshocht, Dieter Schmeisser

Research output: Contribution to journal › Article › peer-review

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Abstract

Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.

Original language	English
Pages (from-to)	N23-N27
Journal	ECS Journal of Solid State Science and Technology
Volume	2
Issue number	1
Early online date	30 Nov 2012
DOIs	https://doi.org/10.1149/2.035301jss
Publication status	Published - 2013

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Popovici, M., Delabie, A., Adelmann, C., Meersschaut, J., Franquet, A., Tallarid, M., Van Den Berg, J., Richard, O., Swerts, J., Tomida, K., Kim, M.-S., Tielens, H., Bender, H., Conard, T., Jurczak, M., Van Elshocht, S., & Schmeisser, D. (2013). Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium. ECS Journal of Solid State Science and Technology, 2(1), N23-N27. https://doi.org/10.1149/2.035301jss

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title = "Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium",

abstract = "Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.",

author = "M. Popovici and Annelies Delabie and Christoph Adelmann and Johan Meersschaut and Alexis Franquet and Massimo Tallarid and {Van Den Berg}, J. and Olivier Richard and Johan Swerts and Kazuyuki Tomida and Min-Soo Kim and Hilde Tielens and Hugo Bender and Thierry Conard and Malgorzata Jurczak and {Van Elshocht}, Sven and Dieter Schmeisser",

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doi = "10.1149/2.035301jss",

language = "English",

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Popovici, M, Delabie, A, Adelmann, C, Meersschaut, J, Franquet, A, Tallarid, M, Van Den Berg, J, Richard, O, Swerts, J, Tomida, K, Kim, M-S, Tielens, H, Bender, H, Conard, T, Jurczak, M, Van Elshocht, S & Schmeisser, D 2013, 'Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium', ECS Journal of Solid State Science and Technology, vol. 2, no. 1, pp. N23-N27. https://doi.org/10.1149/2.035301jss

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AU - Popovici, M.

AU - Delabie, Annelies

AU - Adelmann, Christoph

AU - Meersschaut, Johan

AU - Franquet, Alexis

AU - Tallarid, Massimo

AU - Van Den Berg, J.

AU - Richard, Olivier

AU - Swerts, Johan

AU - Tomida, Kazuyuki

AU - Kim, Min-Soo

AU - Tielens, Hilde

AU - Bender, Hugo

AU - Conard, Thierry

AU - Jurczak, Malgorzata

AU - Van Elshocht, Sven

AU - Schmeisser, Dieter

PY - 2013

Y1 - 2013

N2 - Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.

AB - Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.

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VL - 2

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JF - ECS Journal of Solid State Science and Technology

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ER -

Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium

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