Use of TRIDYN and medium energy ion scattering to calibrate an industrial arsenic plasma doping process

Research output: Contribution to journalArticle

Abstract

Plasma doping ion implantation (PLAD) is becoming increasingly important for enabling the manufacture of advanced semiconductor devices. In this study, a VIISTA PLAD implanter was used to implant planar 300 mm Si wafers with As/7 keV from an arsine containing plasma with a total ion fluence of 1 × 1016 ions/cm2 . The wafers then underwent a wet chemical clean and anneal
to mimic a full industrial process flow. The effects of each process step were measured using crosssectional TEM images, TEM/energy dispersive spectroscopy measurements, and medium energy ion scattering (MEIS). The PLAD implantation process was modeled using dynamic trim (TRIDYN), a dynamic, binary collision approximation model that accounted for the interactions between wafers and the ions and neutrals produced by the PLAD implanter. MEIS spectra were
analyzed to extract elemental concentration depth profiles using POWERMEIS guided by the outputs of the TRIDYN model. The input fluxes of the TRIDYN model were calibrated such that the predicted TRIDYN and MEIS profiles were self-consistent. Combining the different analysis techniques and considering elemental concentrations alongside a TRIDYN model enabled magnitudes of ion and neutral fluxes of Si, As, and H to be proposed, and the relative importance of direct implantation and ion beam mixing during the PLAD implant to be revealed. This, in turn, led to proposals for the sources of the ion and neutral species, the importance of Si neutrals originating from the plasma chamber over those originating from the Si bulk in the “deposited” layer being of particular interest. Following the evolution of the as-implanted profiles through the wet clean and anneal steps gave insights into how the PLAD implant affected the results of the full process flow.
LanguageEnglish
Article number031206
Number of pages9
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume37
Issue number3
Early online date9 Apr 2019
DOIs
Publication statusPublished - 1 May 2019

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Arsenic
Doping (additives)
Scattering
Plasmas
Ions
Ion implantation
Fluxes
Transmission electron microscopy
Semiconductor devices
Ion beams
Energy dispersive spectroscopy

Cite this

@article{9553b73f6dd446559a08a3d5b30ffabd,
title = "Use of TRIDYN and medium energy ion scattering to calibrate an industrial arsenic plasma doping process",
abstract = "Plasma doping ion implantation (PLAD) is becoming increasingly important for enabling the manufacture of advanced semiconductor devices. In this study, a VIISTA PLAD implanter was used to implant planar 300 mm Si wafers with As/7 keV from an arsine containing plasma with a total ion fluence of 1 × 1016 ions/cm2 . The wafers then underwent a wet chemical clean and annealto mimic a full industrial process flow. The effects of each process step were measured using crosssectional TEM images, TEM/energy dispersive spectroscopy measurements, and medium energy ion scattering (MEIS). The PLAD implantation process was modeled using dynamic trim (TRIDYN), a dynamic, binary collision approximation model that accounted for the interactions between wafers and the ions and neutrals produced by the PLAD implanter. MEIS spectra wereanalyzed to extract elemental concentration depth profiles using POWERMEIS guided by the outputs of the TRIDYN model. The input fluxes of the TRIDYN model were calibrated such that the predicted TRIDYN and MEIS profiles were self-consistent. Combining the different analysis techniques and considering elemental concentrations alongside a TRIDYN model enabled magnitudes of ion and neutral fluxes of Si, As, and H to be proposed, and the relative importance of direct implantation and ion beam mixing during the PLAD implant to be revealed. This, in turn, led to proposals for the sources of the ion and neutral species, the importance of Si neutrals originating from the plasma chamber over those originating from the Si bulk in the “deposited” layer being of particular interest. Following the evolution of the as-implanted profiles through the wet clean and anneal steps gave insights into how the PLAD implant affected the results of the full process flow.",
author = "Jonathan England and {Van den Berg}, Jaap and Andrew Rossall",
year = "2019",
month = "5",
day = "1",
doi = "10.1116/1.5088958",
language = "English",
volume = "37",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Use of TRIDYN and medium energy ion scattering to calibrate an industrial arsenic plasma doping process

AU - England, Jonathan

AU - Van den Berg, Jaap

AU - Rossall, Andrew

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Plasma doping ion implantation (PLAD) is becoming increasingly important for enabling the manufacture of advanced semiconductor devices. In this study, a VIISTA PLAD implanter was used to implant planar 300 mm Si wafers with As/7 keV from an arsine containing plasma with a total ion fluence of 1 × 1016 ions/cm2 . The wafers then underwent a wet chemical clean and annealto mimic a full industrial process flow. The effects of each process step were measured using crosssectional TEM images, TEM/energy dispersive spectroscopy measurements, and medium energy ion scattering (MEIS). The PLAD implantation process was modeled using dynamic trim (TRIDYN), a dynamic, binary collision approximation model that accounted for the interactions between wafers and the ions and neutrals produced by the PLAD implanter. MEIS spectra wereanalyzed to extract elemental concentration depth profiles using POWERMEIS guided by the outputs of the TRIDYN model. The input fluxes of the TRIDYN model were calibrated such that the predicted TRIDYN and MEIS profiles were self-consistent. Combining the different analysis techniques and considering elemental concentrations alongside a TRIDYN model enabled magnitudes of ion and neutral fluxes of Si, As, and H to be proposed, and the relative importance of direct implantation and ion beam mixing during the PLAD implant to be revealed. This, in turn, led to proposals for the sources of the ion and neutral species, the importance of Si neutrals originating from the plasma chamber over those originating from the Si bulk in the “deposited” layer being of particular interest. Following the evolution of the as-implanted profiles through the wet clean and anneal steps gave insights into how the PLAD implant affected the results of the full process flow.

AB - Plasma doping ion implantation (PLAD) is becoming increasingly important for enabling the manufacture of advanced semiconductor devices. In this study, a VIISTA PLAD implanter was used to implant planar 300 mm Si wafers with As/7 keV from an arsine containing plasma with a total ion fluence of 1 × 1016 ions/cm2 . The wafers then underwent a wet chemical clean and annealto mimic a full industrial process flow. The effects of each process step were measured using crosssectional TEM images, TEM/energy dispersive spectroscopy measurements, and medium energy ion scattering (MEIS). The PLAD implantation process was modeled using dynamic trim (TRIDYN), a dynamic, binary collision approximation model that accounted for the interactions between wafers and the ions and neutrals produced by the PLAD implanter. MEIS spectra wereanalyzed to extract elemental concentration depth profiles using POWERMEIS guided by the outputs of the TRIDYN model. The input fluxes of the TRIDYN model were calibrated such that the predicted TRIDYN and MEIS profiles were self-consistent. Combining the different analysis techniques and considering elemental concentrations alongside a TRIDYN model enabled magnitudes of ion and neutral fluxes of Si, As, and H to be proposed, and the relative importance of direct implantation and ion beam mixing during the PLAD implant to be revealed. This, in turn, led to proposals for the sources of the ion and neutral species, the importance of Si neutrals originating from the plasma chamber over those originating from the Si bulk in the “deposited” layer being of particular interest. Following the evolution of the as-implanted profiles through the wet clean and anneal steps gave insights into how the PLAD implant affected the results of the full process flow.

UR - http://www.scopus.com/inward/record.url?scp=85064227299&partnerID=8YFLogxK

U2 - 10.1116/1.5088958

DO - 10.1116/1.5088958

M3 - Article

VL - 37

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

T2 - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 3

M1 - 031206

ER -