Waveguide design for mid- and far-infrared p-Si/SiGe quantum cascade lasers

Z. Ikonić; R. W. Kelsall; P. Harrison

doi:10.1088/0268-1242/19/1/013

Waveguide design for mid- and far-infrared p-Si/SiGe quantum cascade lasers

Z. Ikonić, R. W. Kelsall, P. Harrison

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Design considerations are presented for waveguides to be used in p-Si/SiGe based quantum cascade lasers operating in the mid- and far-infrared wavelength ranges. Modal losses and confinement factors are calculated for both TM and TE modes in conventional double metal clad structures, metal-highly doped semiconductor layer structures and also in novel metal-metal suicide structures. Guidelines for choosing the confinement and contact layer parameters are given.

Original language	English
Pages (from-to)	76-81
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	19
Issue number	1
Early online date	8 Oct 2003
DOIs	https://doi.org/10.1088/0268-1242/19/1/013
Publication status	Published - 1 Jan 2004
Externally published	Yes

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abstract = "Design considerations are presented for waveguides to be used in p-Si/SiGe based quantum cascade lasers operating in the mid- and far-infrared wavelength ranges. Modal losses and confinement factors are calculated for both TM and TE modes in conventional double metal clad structures, metal-highly doped semiconductor layer structures and also in novel metal-metal suicide structures. Guidelines for choosing the confinement and contact layer parameters are given.",

keywords = "Electron energy levels, Electron transitions, Heterojunctions, Infrared radiation, Polarization, Quantum theory, Semiconducting silicon compounds, Semiconductor doping, Semiconductor metal boundaries, Surface plasmon resonance, Waveguides",

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T1 - Waveguide design for mid- and far-infrared p-Si/SiGe quantum cascade lasers

AU - Ikonić, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Design considerations are presented for waveguides to be used in p-Si/SiGe based quantum cascade lasers operating in the mid- and far-infrared wavelength ranges. Modal losses and confinement factors are calculated for both TM and TE modes in conventional double metal clad structures, metal-highly doped semiconductor layer structures and also in novel metal-metal suicide structures. Guidelines for choosing the confinement and contact layer parameters are given.

AB - Design considerations are presented for waveguides to be used in p-Si/SiGe based quantum cascade lasers operating in the mid- and far-infrared wavelength ranges. Modal losses and confinement factors are calculated for both TM and TE modes in conventional double metal clad structures, metal-highly doped semiconductor layer structures and also in novel metal-metal suicide structures. Guidelines for choosing the confinement and contact layer parameters are given.

KW - Electron energy levels

KW - Electron transitions

KW - Heterojunctions

KW - Infrared radiation

KW - Polarization

KW - Quantum theory

KW - Semiconducting silicon compounds

KW - Semiconductor doping

KW - Semiconductor metal boundaries

KW - Surface plasmon resonance

KW - Waveguides

UR - http://www.scopus.com/inward/record.url?scp=0347128051&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/19/1/013

DO - 10.1088/0268-1242/19/1/013

M3 - Article

AN - SCOPUS:0347128051

VL - 19

SP - 76

EP - 81

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 1

ER -

Waveguide design for mid- and far-infrared p-Si/SiGe quantum cascade lasers

Abstract

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