Weak-beam dark-field electron tomography of dislocations in GaN

J. S. Barnard, J. Sharp, J. R. Tong, P. A. Midgley

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)

Abstract

By combining weak-beam dark-field imaging with tomography, we have been able to reconstruct the three-dimensional structure of dislocation arrays in GaN. With a mixture of both threading and in-plane dislocations, owing to plastic relaxation of the film, we look at how well each dislocation is reconstructed and what limits are imposed by way of dislocation density and material anisotropy.

Original languageEnglish
Article number059
Pages (from-to)247-250
Number of pages4
JournalJournal of Physics: Conference Series
Volume26
Issue number1
Early online date27 Feb 2006
DOIs
Publication statusPublished - 27 Feb 2006
Externally publishedYes
EventImaging, Analysis and Fabrication on the Nanoscale - University of Leeds, Leeds, United Kingdom
Duration: 31 Aug 20052 Sep 2005

Fingerprint

Dive into the research topics of 'Weak-beam dark-field electron tomography of dislocations in GaN'. Together they form a unique fingerprint.

Cite this