By combining weak-beam dark-field imaging with tomography, we have been able to reconstruct the three-dimensional structure of dislocation arrays in GaN. With a mixture of both threading and in-plane dislocations, owing to plastic relaxation of the film, we look at how well each dislocation is reconstructed and what limits are imposed by way of dislocation density and material anisotropy.
|Number of pages||4|
|Journal||Journal of Physics: Conference Series|
|Early online date||27 Feb 2006|
|Publication status||Published - 27 Feb 2006|
|Event||Imaging, Analysis and Fabrication on the Nanoscale - University of Leeds, Leeds, United Kingdom|
Duration: 31 Aug 2005 → 2 Sep 2005