Weak-beam dark-field electron tomography of dislocations in GaN

J. S. Barnard; J. Sharp; J. R. Tong; P. A. Midgley

doi:10.1088/1742-6596/26/1/059

Weak-beam dark-field electron tomography of dislocations in GaN

J. S. Barnard, J. Sharp, J. R. Tong, P. A. Midgley

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

By combining weak-beam dark-field imaging with tomography, we have been able to reconstruct the three-dimensional structure of dislocation arrays in GaN. With a mixture of both threading and in-plane dislocations, owing to plastic relaxation of the film, we look at how well each dislocation is reconstructed and what limits are imposed by way of dislocation density and material anisotropy.

Original language	English
Article number	059
Pages (from-to)	247-250
Number of pages	4
Journal	Journal of Physics: Conference Series
Volume	26
Issue number	1
Early online date	27 Feb 2006
DOIs	https://doi.org/10.1088/1742-6596/26/1/059
Publication status	Published - 27 Feb 2006
Externally published	Yes
Event	Imaging, Analysis and Fabrication on the Nanoscale - University of Leeds, Leeds, United Kingdom Duration: 31 Aug 2005 → 2 Sep 2005

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@article{0f32aa0d8f7947169c5a2bdac7af3356,

title = "Weak-beam dark-field electron tomography of dislocations in GaN",

abstract = "By combining weak-beam dark-field imaging with tomography, we have been able to reconstruct the three-dimensional structure of dislocation arrays in GaN. With a mixture of both threading and in-plane dislocations, owing to plastic relaxation of the film, we look at how well each dislocation is reconstructed and what limits are imposed by way of dislocation density and material anisotropy.",

keywords = "Tomography, weak-beam imaging, Electron beam",

author = "Barnard, {J. S.} and J. Sharp and Tong, {J. R.} and Midgley, {P. A.}",

year = "2006",

month = feb,

day = "27",

doi = "10.1088/1742-6596/26/1/059",

language = "English",

volume = "26",

pages = "247--250",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Weak-beam dark-field electron tomography of dislocations in GaN

AU - Barnard, J. S.

AU - Sharp, J.

AU - Tong, J. R.

AU - Midgley, P. A.

PY - 2006/2/27

Y1 - 2006/2/27

N2 - By combining weak-beam dark-field imaging with tomography, we have been able to reconstruct the three-dimensional structure of dislocation arrays in GaN. With a mixture of both threading and in-plane dislocations, owing to plastic relaxation of the film, we look at how well each dislocation is reconstructed and what limits are imposed by way of dislocation density and material anisotropy.

AB - By combining weak-beam dark-field imaging with tomography, we have been able to reconstruct the three-dimensional structure of dislocation arrays in GaN. With a mixture of both threading and in-plane dislocations, owing to plastic relaxation of the film, we look at how well each dislocation is reconstructed and what limits are imposed by way of dislocation density and material anisotropy.

KW - Tomography

KW - weak-beam imaging

KW - Electron beam

UR - http://www.scopus.com/inward/record.url?scp=33644557119&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/26/1/059

DO - 10.1088/1742-6596/26/1/059

M3 - Conference article

AN - SCOPUS:33644557119

VL - 26

SP - 247

EP - 250

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 059

T2 - Imaging, Analysis and Fabrication on the Nanoscale

Y2 - 31 August 2005 through 2 September 2005

ER -

Weak-beam dark-field electron tomography of dislocations in GaN

Abstract

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